| Allicdata Part #: | SQP25N15-52_GE3-ND |
| Manufacturer Part#: |
SQP25N15-52_GE3 |
| Price: | $ 0.93 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 150V 25A TO220AB |
| More Detail: | N-Channel 150V 25A (Tc) 107W (Tc) Through Hole TO-... |
| DataSheet: |  SQP25N15-52_GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 500 +: | $ 0.83680 |
| Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 107W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2360pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | Automotive, AEC-Q101, TrenchFET® |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 52 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
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The SQP25N15-52_GE3 is a N-channel enhancement-mode MOSFET transistor designed for power line applications. It is designed with a high operating voltage, high-speed gate response times, low ON-state resistance, and good switching characteristics.
Application Field of SQP25N15-52_GE3
The SQP25N15-52_GE3 is well-suited for applications that require a high-performance MOSFET transistor. It is most commonly used in the power supply of DC motors, home appliances, BLDC motors, light-emitting diode (LED) lighting, and automotive control systems. Additionally, its high operating voltage makes it suitable for applications in high-voltage systems, such as solar panels and DC-DC converters.
Working Principle of SQP25N15-52_GE3
The SQP25N15-52_GE3 is a single N-channel enhancement-mode MOSFET transistor with a maximum drain-source voltage of 52 V and a maximum drain current of 15 A. It has an ON-state resistance of 0.031 Ω and a gate-source capacitance of 16.4 pF. It is designed for high-speed switching and can be operated at a maximum frequency of 40 MHz.
The SQP25N15-52_GE3 works by utilizing the field-effect principle of MOSFETs. When a voltage is applied to the gate of the device, it creates an electrical field that controls the conductivity between the source and drain terminals. This allows current to flow only when the voltage supplied to the gate is greater than the threshold voltage.
The SQP25N15-52_GE3 is also designed with a unique threshold voltage temperature compensation profile that helps to ensure consistent operation over a wide temperature range. This feature can help reduce the risks associated with overvoltage and temperature fluctuations.
Conclusion
The SQP25N15-52_GE3 is a high-performance N-channel enhancement-mode MOSFET transistor suitable for applications in high-voltage systems. It offers a high operating voltage, low ON-state resistance, and good switching characteristics. Additionally, it has a unique threshold voltage temperature compensation profile that ensures consistent operation over a wide temperature range. This makes it an excellent choice for applications that require reliable power delivery.
The specific data is subject to PDF, and the above content is for reference
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