
Allicdata Part #: | SQP60N06-15_GE3-ND |
Manufacturer Part#: |
SQP60N06-15_GE3 |
Price: | $ 0.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 56A TO220AB |
More Detail: | N-Channel 60V 56A (Tc) 107W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 1000 |
500 +: | $ 0.73030 |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2480pF @ 25V |
Vgs (Max): | ±20V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SQP60N06-15_GE3 is a N-channel MOSFET with an ultra-low on-resistance range of 0.006 ohm and extremely efficient switching performance. It is ideal for high-frequency switch-mode power supplies and DC-DC converters, as well as motor control, solar micro-inverters, and energy storage controllers.
The SQP60N06-15_GE3 utilizes its low on-resistance and optimized gate charge characteristics to increase system efficiency and reduce power losses associated with switching-induced losses. This MOSFET also features a very low thermal resistance and is capable of withstanding reverse voltages of up to 20V. Other features include a maximum drain-source breakdown voltage of 600V and a maximum drain current of 60A.
The SQP60N06-15_GE3 is well suited for a variety of applications that require high power switching. It can be used in power electronics and electric vehicle applications, as well as switch-mode power supplies, DC-DC converters, motor control, solar micro-inverters, and energy storage controllers. It can also be used as an output stage for Class D amplifiers and for other high-frequency switching applications. It is also suitable for use in low noise switching circuits, as it has very low gate input capacitance and is capable of operating at high frequencies.
The working principle of the SQP60N06-15_GE3 is quite straightforward. When a gate voltage is applied, it creates an electric field that overcomes the barrier potential of the channel, which in turn causes the channel to conduct. The SQP60N06-15_GE3 is an on-state device. This means that it will remain in the on-state until the applied gate voltage is reversed or removed. In addition, the SQP60N06-15_GE3 has very low output capacitance, allowing it to switch at high frequencies.
In conclusion, the SQP60N06-15_GE3 is an ideal MOSFET for high power switching applications. It has a very low on-resistance range and its optimized gate charge characteristics make it very efficient in switching performance. It is suitable for use in a variety of applications such as power electronics, electric vehicles, switch-mode power supplies, motor control, solar micro-inverters, and energy storage controllers. Its low capacitance and high-frequency operation make it well suited for low noise switching circuits. Its highly efficient and reliable switching performance makes it the ideal choice for any power electronic design.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SQP60N06-15_GE3 | Vishay Silic... | 0.81 $ | 1000 | MOSFET N-CH 60V 56A TO220... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
