SQP60N06-15_GE3 Allicdata Electronics
Allicdata Part #:

SQP60N06-15_GE3-ND

Manufacturer Part#:

SQP60N06-15_GE3

Price: $ 0.81
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 56A TO220AB
More Detail: N-Channel 60V 56A (Tc) 107W (Tc) Through Hole TO-2...
DataSheet: SQP60N06-15_GE3 datasheetSQP60N06-15_GE3 Datasheet/PDF
Quantity: 1000
500 +: $ 0.73030
Stock 1000Can Ship Immediately
$ 0.81
Specifications
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Vgs (Max): ±20V
Series: Automotive, AEC-Q101, TrenchFET®
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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The SQP60N06-15_GE3 is a N-channel MOSFET with an ultra-low on-resistance range of 0.006 ohm and extremely efficient switching performance. It is ideal for high-frequency switch-mode power supplies and DC-DC converters, as well as motor control, solar micro-inverters, and energy storage controllers.

The SQP60N06-15_GE3 utilizes its low on-resistance and optimized gate charge characteristics to increase system efficiency and reduce power losses associated with switching-induced losses. This MOSFET also features a very low thermal resistance and is capable of withstanding reverse voltages of up to 20V. Other features include a maximum drain-source breakdown voltage of 600V and a maximum drain current of 60A.

The SQP60N06-15_GE3 is well suited for a variety of applications that require high power switching. It can be used in power electronics and electric vehicle applications, as well as switch-mode power supplies, DC-DC converters, motor control, solar micro-inverters, and energy storage controllers. It can also be used as an output stage for Class D amplifiers and for other high-frequency switching applications. It is also suitable for use in low noise switching circuits, as it has very low gate input capacitance and is capable of operating at high frequencies.

The working principle of the SQP60N06-15_GE3 is quite straightforward. When a gate voltage is applied, it creates an electric field that overcomes the barrier potential of the channel, which in turn causes the channel to conduct. The SQP60N06-15_GE3 is an on-state device. This means that it will remain in the on-state until the applied gate voltage is reversed or removed. In addition, the SQP60N06-15_GE3 has very low output capacitance, allowing it to switch at high frequencies.

In conclusion, the SQP60N06-15_GE3 is an ideal MOSFET for high power switching applications. It has a very low on-resistance range and its optimized gate charge characteristics make it very efficient in switching performance. It is suitable for use in a variety of applications such as power electronics, electric vehicles, switch-mode power supplies, motor control, solar micro-inverters, and energy storage controllers. Its low capacitance and high-frequency operation make it well suited for low noise switching circuits. Its highly efficient and reliable switching performance makes it the ideal choice for any power electronic design.

The specific data is subject to PDF, and the above content is for reference

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