SQP90142E_GE3

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SQP90142E_GE3 is a single N-channel enhancement mode Field Effect Transistor (FET). This device is designed to minimize the On-State resistance (RDS(on)) and yet maintain a fast switching speed. It is mainly used in switch mode power supply (SMPS) applications, such as DC/DC converters, power supplies, motor drives, mobile infrastructure and UPS systems.

The SQP90142E_GE3 is constructed in a TO-220 package and has an operating temperature of -55°C to 175°C. It is a very popular transistor due to its superior performance and cost effectiveness.

In order to understand its working principle, it is important to understand the basic properties of a FET. A FET is a three terminal device where its source, drain and gate can be seen as two PN junctions, with one PN junction between the source and drain and the other PN junction between the drain and gate. The source and drain terminals of the transistor act as an electric field while the gate terminal acts as a barrier.

When a positive voltage is applied to the gate terminal of the FET, the gate-source voltage (VGS) increases, resulting in an increase in the electric field between the source and drain terminals. This electric field is responsible for attracting the drain electrons to the source, thus forming a short between the source and drain terminals. This short is the On-State of the FET and current can flow through it.

On the other hand, when the voltage applied to the gate terminal of the FET is negative, the electrons will not be attracted to the source, thus forming an open circuit between the source and drain terminals. This is then the Off-State of the FET and current will not be able to flow through it.

The SQP90142E_GE3 has an excellent On-State resistance of only 5 mΩ. This ensures that it can quickly switch and power devices at high speed. It also has a breakdown voltage of 50V, which is capable of handling high voltage levels. Additionally, it has low gate capacitance and threshold voltage, allowing it to operate at higher frequencies.

The SQP90142E_GE3 is also designed with a special protective layer, which protects it from ESD (electrostatic discharge) damage. This is especially important as ESD has the potential to cause permanent damage to the FET if not handled properly.

To conclude, the SQP90142E_GE3 is an excellent single N-channel enhancement mode FET with superior performance and cost effectiveness. It has excellent On-State resistance, low gate capacitance and threshold voltage and is capable of handling high voltage levels. Additionally, it has a protective layer to protect it from ESD damage. It is a popular transistor and is widely used in switch mode power supply (SMPS) applications such as DC/DC converters and power supplies.

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