Allicdata Part #: | SQR40N10-25_GE3-ND |
Manufacturer Part#: |
SQR40N10-25_GE3 |
Price: | $ 0.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 40A TO263 |
More Detail: | N-Channel 100V 40A (Tc) 136W (Tc) Surface Mount TO... |
DataSheet: | SQR40N10-25_GE3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.68465 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3380pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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?The SQR40N10-25_GE3 is a single logic N-channel MOSFET (metal–oxide–semiconductor field-effect transistor) made by ON Semiconductor, a well-known electronic component manufacturer. It is useful in situations where a low-power, low-voltage, and low-current transistor must be used to switch relatively large peak currents. Generally, MOSFETs are favored over their bipolar counterparts because they require less power to switch and are much more efficient in doing so. This type of MOSFET has its own unique characteristics, making it suitable for a wide range of applications.
Application Field
The SQR40N10-25_GE3 is most suitable for low-powered, low-current switching applications, as its maximum drain current is 200mA. Its relatively low on-resistance makes it suitable for these applications. It is designed for switching digital signals, for example to switch the power on and off for devices such as cameras, cellular phones, and portable media players. It can also be used in a power circuit to switch off a specific part of the circuit when a certain voltage or current is reached. Additionally, it can be used in power converters, such as switches between input and output in a DC-DC converter. Other possible applications include simple polarity inverting circuits, regulators, and using it with an integrated circuit as an amplifier.
Working Principle
The working principle of the SQR40N10-25_GE3 is simple. When a voltage is applied to the gate, it causes the channel between the source and the drain to be pinched off, turning the MOSFET into an "off" state. When the voltage is removed, the channel opens again, allowing current to flow between the source and the drain. By applying a specific voltage to the gate terminal, the channel can be controlled, allowing for precise control of the drain current. This makes it ideal for use as digital switches in low-power applications. Additionally, since the gate does not draw any current, the MOSFET can be used in low-power circuits.
Conclusion
In conclusion, the SQR40N10-25_GE3 is an ideal choice for low-power, low-current digital switch applications. Its low on-resistance and low power requirements make it suitable for a wide range of applications, including switches and amplifiers. Its relatively low cost, along with its other advantages, make it a popular choice among electronic component manufacturers and users alike.
The specific data is subject to PDF, and the above content is for reference
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