Gate Charge (Qg) (Max) @ Vgs:	105nC @ 10V
Package / Case:	TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package:	D-PAK (TO-252)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	136W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6700pF @ 25V
Vgs (Max):	±20V
Series:	Automotive, AEC-Q101, TrenchFET®
Vgs(th) (Max) @ Id:	3.5V @ 250µA
Rds On (Max) @ Id, Vgs:	3.8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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Introduction

The SQR50N04-3M8_GE3 is a single n-channel enhancement mode Field-Effect Transistor (FET) made with advanced power MOSFET Technology. This device offers superior figure of merit of low on-resistance R_DSon, low gate charge Q_g, and fast switching speed. It is an ideal device for large current and high voltage application.

Application

The SQR50N04-3M8_GE3 is used for a variety of high power applications such as power management, motor control, and DC-DC converters. It has a blocking capability of up to 200V and can handle up to 24A of continuous current, making it an ideal choice for many applications that require high power devices. Additionally, as FETs do not require a gate voltage to stay on, they are often used in places that require devices with low “on” resistance.

Working Principle

FETs operate on the principles of the capacitive effect, which is based on the fact that a capacitor is a device that stores energy. When a voltage is applied across the FET, a small electric field is created between the gate and the source, which slightly changes the conductivity of the channel between the source and the drain. This change in conductivity is proportional to the size of the electrical field applied between the gate and the source, increasing or decreasing the resistance of the channel. This changing resistance allows the FET to act as a switch or amplifier, allowing a device to be controlled by the small gate voltage and allowing it to regulate the flow of current through the channel, without requiring additional components.

Conclusion

The SQR50N04-3M8_GE3 is a widely used enhancement mode FET that is capable of withstanding up to 200V and 24A of continuous current. It is a preferred choice for many applications due to its low “on” resistance, making it suitable for power management, motor control, and DC-DC converters. Additionally, FETs operate on the principle of the capacitive effect, which allows a device to be controlled by the gate voltage and regulate the flow of current through the channel, without the need for additional components.

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