SQR70090ELR_GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package:	D-PAK (TO-252)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	136W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	65nC @ 10V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	8.7 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	86A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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SQR70090ELR_GE3 Application Field and Working Principle

The SQR70090ELR_GE3 is a gallium arsenide field-effect transistor manufactured by NXP Semiconductor. It is a single enhancement mode junction field-effect transistor (JFET) that can be used in a variety of applications. This device is typically used in power supply switching, monitoring circuits, and amplifier applications.The SQR70090ELR_GE3 is a high-performance N-channel MOSFET with an internal gate-source voltage (VGS) of 28V and a maximum drain-source voltage (VDS) of 200V. It has a low on-state resistance (RDS (ON)) of 5.8mΩ, making it suitable for high-efficiency power conversion applications. Additionally, the device has an output charge of 1.17nC and is capable of supporting high switching frequencies.The operating temperature range of the SQR70090ELR_GE3 is between -55°C and +175°C. It has an integrated process for EMI/RFI protection, allowing for high noise immunity. The device is available in two package types, a TO220 package and a surface mount package (TQFN).The working principle of the SQR70090ELR_GE3 is based on the way in which a junction field-effect transistor (JFET) functions. The device consists of a source, a drain, and a gate which are separated by a thin layer of silicon dioxide. This layer acts as an insulator and is responsible for controlling the carrier flow between the source and the drain. The JFET functions as a voltage-controlled device, meaning that the current flowing through the device is dependent upon the gate-source voltage (VGS) applied to the gate of the transistor.When a voltage is applied to the gate of the SQR70090ELR_GE3, it creates an electric field which in turn creates an alteration in the thickness of the oxide layer. This alteration creates a variation in the number of carriers that can pass through the channel between the source and the drain, allowing for current flow to occur. By controlling the gate-source voltage, the device can be switched from off (VGS = 0V) to on (VGS > 3V).The SQR70090ELR_GE3 is most often used in applications where a small size and high switching speed are required. It is also beneficial for power supplies and amplification applications as it exhibits excellent efficiency and power performance. By virtue of its integrated process for EMI/RFI protection, the device is suitable for use in noisy environments. The operating temperature range and low on-state resistance of the device make it particularly suitable for high-efficiency applications where low heat output and increased power savings are desired. Finally, due to its compact size, the SQR70090ELR_GE3 is ideal for space-constrained applications.

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