SQR97N06-6M3L_GE3

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The SQR97N06-6M3L_GE3 MOSFET is a single vertical FET (field effect transistor) with an N-channel and low on-resistance (63 mOhm max at VGS = 10 V). It is designed to be used in a variety of applications, including power conversion, regulation, and switching. In this article, we will explore the application field and working principle of the SQR97N06-6M3L_GE3 MOSFET.

Application Field

The SQR97N06-6M3L_GE3 MOSFET is designed for a wide variety of high-power applications. It is particularly well-suited for use in DC/DC converters, DC/AC inverters, and motor drivers. Additionally, it is very capable of handling high-frequency switching, as well as power regulation and control.

Working Principle

The fundamental principle behind the operation of the SQR97N06-6M3L_GE3 MOSFET is that of a voltage-controlled, field-effect transistor. In the MOSFET, a voltage is applied to the gate terminal that creates an electric field between the gate and the source terminal. This electric field then controls the conductivity of the “channel” between the source and drain terminals, allowing a current to flow through the channel.

The amount of current that can flow through the channel is dependent on the voltage applied to the gate terminal. When the voltage applied to the gate exceeds a certain threshold (VGS(th)), the conductivity of the channel increases dramatically, allowing a larger amount of current to flow. If the voltage applied to the gate rises above a certain level (VGS(TO)), the channel becomes saturated, allowing the maximum possible current to flow.

The SQR97N06-6M3L_GE3 MOSFET is rated to operate with a maximum gate-source voltage of 20 V, and a maximum current of 33 A. Its on-resistance is only 63 mOhm at a VGS of 10 V. This makes it well-suited for high-power applications.

Conclusion

The SQR97N06-6M3L_GE3 MOSFET is a single vertical FET with an N-channel and low on-resistance. It is designed for use in various high-power applications, such as DC/DC converters, DC/AC inverters, motor drivers, and more. The working principle of the MOSFET involves the application of a voltage to the gate terminal, which then controls the conductivity of the channel between the source and drain terminals. This allows for the efficient and effective control of high power levels.

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