SQS840EN-T1_GE3

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The SQS840EN-T1_GE3 is an N-channel MOSFET with a drain to source voltage ranging from 20 to 100 volts and a source to drain current up to 7.1 amps. It is primarily used in high-current, high-power applications such as automotive, consumer, and industrial electronics. This MOSFET is especially suitable for motor control and switching applications. This device is a part of SQS840EN family which offers excellent RDS(ON) performance, power efficiency, and low gate charge.

Application Field

The SQS840EN-T1_GE3 can be used in many different applications. It is an ideal choice for high-power, high-current switching and motor control applications. This device is particularly suitable for high-load, high-temperature driving industrial and automotive applications such as HIDs, DC-DC converters, power supplies, and power inverters. This device can also be used in audio, television, and computer power supplies where switching and speed regulation is required. Additionally, this device is suitable for DC motors, pumps, and fans that require superior performance in high-temperature environment.

Working Principle

The SQS840EN-T1_GE3 uses a two-terminal, four layer construction with source and drain terminals connected to a thin N-channel and P-channel layer. The N-channel is lightly doped with a thin, highly conductive N-channel layer. This layer is separated by an oxide layer to form the Gate and Source junction. Applying a positive voltage to the Gate will cause electrons to accumulate and form an inversion zone. This creates a low resistance channel between the Source and the Drain. The inversion zone is modulated by adjusting the Gate voltage, thus controlling the flow of current between the Source and the Drain. This makes it possible to attain fast switching speeds, making it ideal for high-speed switching and motor control applications.

The SQS840EN-T1_GE3 also offers superior RDS(ON) performance and power efficiency. This is due to its low gate charge (Qg) and reduced output capacitance (COSS). A low Qg means that the SQS840EN-T1_GE3 requires less energy to switch on and off, allowing for increased power efficiency. Its low COSS further reduces the amount of energy lost when switching, allowing for improved power efficiency.

The SQS840EN-T1_GE3 also has a very low thermal resistance and can be used in high-temperature environments. It has a drain to source breakdown voltage of 100 volts and a source to drain current of 7.1 amps. This makes it ideal for applications that require high power and high-current switching.

Conclusion

The SQS840EN-T1_GE3 is an N-Channel MOSFET that is suitable for many high-current, high-power applications. It offers superior RDS(ON) performance, power efficiency, and low gate charge. It is ideal for motor control and switching applications where fast switching and high power are required. It also offers a low thermal resistance, making it suitable for high-temperature environments. This makes it a great choice for automotive, consumer, and industrial electronic applications.

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