SS05N70AKMA1

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SS05N70AKMA1 application field and working principle

The SS05N70AKMA1 is a Silicon Carbide (SiC) MOSFET developed by Shenzhen Supermicro Microelectronics Technology Co., Ltd. It is a SiC power MOSFET designed with a cascode structure, so it has a higher break-down voltage and lower Qrr at the same voltage rating, which is more suitable for high-frequency power conversion applications. It is widely used in automotive, industrial, telecommunications and other industries.

The working principle of the SS05N70AKMA1 is based on the theory of metal-oxide-semiconductor field-effect transistors (MOSFETs). A MOSFET is composed of four regions: source, gate, drain, and body. The source and the drain are connected to the external circuit and form a channel, and the gate is insulated from the channel and has a voltage applied to it. The gate can control the current between the source and the drain by altering the voltage applied to the gate. The body is a semiconductor substrate, which can provide the necessary DC bias voltage or act as an additional input. To simplify the design, the body is often connected to the source.

The SS05N70AKMA1 has a N-channel enhancement mode MOSFET structure, with a drain to source breakdown voltage of 700V, drain current of 80A, and a maximum operating junction temperature of 175°C. It has low on-state electrical resistance, low gate charge and capacitance, high-speed switching, and low gate threshold voltage, which makes it suitable for high-frequency switching applications. The cascode configuration reduces the drain to source charge, making it more suitable for high-frequency switching applications.

The SS05N70AKMA1 is an efficient and reliable SiC MOSFET with superior electrical and thermal characteristics. It is designed to meet the needs of high-efficiency switching applications in automotive, industrial, telecommunications and other related fields. It is an ideal solution for higher efficiency power conversions, providing power savings, reliability and excellent thermal performance.

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