SSH22N50A Allicdata Electronics
Allicdata Part #:

SSH22N50A-ND

Manufacturer Part#:

SSH22N50A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 22A TO-3P
More Detail: N-Channel 500V 22A (Tc) 278W (Tc) Through Hole TO-...
DataSheet: SSH22N50A datasheetSSH22N50A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 250 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The SSH22N50A is a high-voltage, N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used for switching and amplification. It is designed for a wide range of applications, from low-frequency to high-frequency switching, from low power to high power levels. It is a very versatile component, and is used in a variety of devices, such as digital video recorders, computers, cell phones, and other consumer electronics.

The SSH22N50A has a drain-to-source breakdown voltage of 500V, a breakdown voltage of 5V, and a maximum drain-to-source current of 22A. It has a maximum gate-to-source voltage of ±20V and an on-resistance of less than 360mΩ. The SSH22N50A is rated for temperatures from -65°C to +175°C (Tj) and is offered in a TO-220AB package.

The working principle of the SSH22N50A is relatively simple. It works by controlling the flow of current between the source and the drain. When a voltage is applied to the gate, the electric field will become strong enough to attract mobile electrons away from the gate and onto the drain. This increases the number of charge carriers, creating an efficient channel for current to travel between the source and the drain.

The SSH22N50A is primarily used in applications that require fast switching performance, low power dissipation, and high efficiency. It is commonly used in switching power supplies, motor drives, relay drivers, and other high power applications that require fast switching, high efficiency, and low power dissipation. In addition, the SSH22N50A is also used in digital logic gate and pulse shaping circuits, as well as in radio frequency amplifiers and oscillators.

The SSH22N50A is typically used as an enhancement-mode power MOSFET, meaning that it must have a positive gate-to-source voltage in order for it to switch on. The SSH22N50A is typically operated at either the cut-off mode or the saturation mode, with the drive voltage and gate-to-source resistance being used to control the amount of current that can flow through the MOSFET.

Overall, the SSH22N50A is a versatile MOSFET that can be used in a number of applications, from low power devices to high power switching and amplification circuits. It is well-suited for most devices due to its high breakdown voltage and high current rating, and its ability to provide efficient switching performance and low power dissipation.

The specific data is subject to PDF, and the above content is for reference

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