Allicdata Part #: | SSH70N10A-ND |
Manufacturer Part#: |
SSH70N10A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 70A TO-3 |
More Detail: | N-Channel 100V 70A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | SSH70N10A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4870pF @ 25V |
Vgs (Max): | -- |
Gate Charge (Qg) (Max) @ Vgs: | 195nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SSH70N10A is a high-speed, low-capacitance MOSFET that is commonly used in a variety of applications. This device is a single junction field effect transistors (FETs) that operates with extremely low gate capacitance values and higher switching frequencies for better power management. This transistor is often used in applications such as high-speed switching, high-frequency switching, audio amplifier systems and other DC-to-DC regulated applications.
The SSH70N10A is built using a single N-type junction FET (JFET) gate structure. This gate structure has a structure of a single N-type junction FET. It is a single-n junction FET, with the N-type being connected to the source, drain and gate of the transistor, instead of two separate N-type junctions or two P-type junctions. This gate structure forms the basis for the SSH70N10A’s high switching frequency and low gate capacitance characteristics. Additionally, due to the small size of the junction FETs in the gate structure, these transistors are also capable of being used in small spaces.
The SSH70N10A is a N-channel type FET that utilizes an elevated gate structure, which allows for extremely low gate-to-source capacitance. This low gate-to-source capacitance is essential for high-speed switching operation, as it allows the FET to be triggered more quickly, reducing switching times and increasing the overall switching speed of the device. Additionally, the elevated gate structure also helps to reduce or eliminate the risk of electro-magnetic interference (EMI).
The SSH70N10A also has a low-on resistance rating, which allows for better current handling capability. This capability helps to reduce the amount of power loss across the transistor, as well as provide better overall efficiency for switch-mode power supplies. Additionally, due to their low-on resistance, these transistors are also capable of providing enhanced surge protection and over-current tripping.
Finally, due to their superior features and exceptional electro-static discharge (ESD) protection, SSH70N10A transistors are also ideal for use in a wide variety of applications, particularly in communication and audio systems. In communication systems, these transistors are useful for providing high-frequency switching and RF power switching, as well as providing noise-free and low jitter operation. In audio systems, the SSH70N10A can be used to help provide superior sound quality, by reducing hum and noise.
Overall, the SSH70N10A is a versatile and solid MOSFET, with a range of characteristics that make it ideal for a wide range of applications, from communications to audio systems. This device has superior switching speeds, low-on resistance, and an elevated gate structure, which all combine to make the SSH70N10A a highly efficient and reliable transistor for every kind of application.
The specific data is subject to PDF, and the above content is for reference
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