SST38VF6401B-70-5I-B3KE-T

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SST38VF6401B-70-5I-B3KE-T is a type of memory mainly used in multiple applications. Applications of SST38VF6401B-70-5I-B3KE-T include embedded memory, automotive, industrial and military applications, telecommunications, consumer electronics, CANbus and various other industrial components. Some of the features that make it suitable for its wide variety of applications include its low power operation, optimized power consumption, low read-write latency and wide operating temperature range. It is an ideal component for efficient memory management in embedded software and applications.

SST38VF6401B-70-5I-B3KE-T utilizes a static random access memory (SRAM) structure, with a 512Kbit (1/4Mb) capacity. At the chip level, the component is organized as a 32K× 16 array of cells across a 16MB width. It is produced on a 0.35μm feature size CMOS process and offers fast random access with a low read-write latency of 1.3ns. The component is operated with a single 3.3V power supply and is packaged in a 16-pin TSOP-1 package.

The component can be programmed as either stand-alone memory modules or as integrated with a single-chip microcontroller or processor. The component has a burst mode that allows multiple words to be accessed from the chip with a single command. A scratch pad memory, which provides fast access to the program memory, can be used to store data variables for short term use. The component also has a study/write-protect feature that prevents it from being overwritten.

The SST38VF6401B-70-5I-B3KE-T memory is organized as a 512Kbit (1/4Mb) array of 32K × 16 cells. Internally, it utilizes a 64-bit wide SRAM cell that is operated at a single internal write clock frequency, with a maximum operating frequency of 70MHz. Additionally, the component has a dedicated external write address bus along with an 8-bit wide data bus. The component has an additional input/output (I/O) buffer, which allows it to be used as a dedicated serial I/O port.

The component also has an on-chip initialization controller, which assists in the initialization, power on reset and low power storage of all information stored in the component. This controller has a two-stage pipeline architecture, which ensures access to the memory with minimal power consumption. Additionally, the SST38VF6401B-70-5I-B3KE-T component has an internal power-on reset circuit, which is controlled by an on-chip oscillator. This helps provide secure power management, allowing the component to maintain optimal operation and to preserve on-chip data.

SST38VF6401B-70-5I-B3KE-T memory is designed for reliable operation over extended temperature ranges and high voltage ranges. The component is designed for operation in the temperature range of -40°C to +150°C and is certified to handle supply voltages in the range of 1.8 V to 3.6 V. This ensures reliable operation at extreme conditions. Furthermore, the component has a proprietary refresh cycle that extends its operating temperature range to beyond that of other SRAMs, providing reliable operation even in extreme thermal environments.

In conclusion, SST38VF6401B-70-5I-B3KE-T is an ideal component for multiple embedded memory applications. It provides fast random access, low read/write latency and high reliability over extended temperature ranges. The component is suitable for use in automotive, industrial and military applications, telecommunications, consumer electronics, CANbus and various other industrial components.

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