Allicdata Part #: | SST39LF200A-45-4C-EKE-T-ND |
Manufacturer Part#: |
SST39LF200A-45-4C-EKE-T |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 2M PARALLEL 48TSOP |
More Detail: | FLASH Memory IC 2Mb (128K x 16) Parallel 45ns 48-... |
DataSheet: | SST39LF200A-45-4C-EKE-T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SST39 MPF™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 2Mb (128K x 16) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | SST39LF200A |
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The SST39LF200A-45-4C-EKE-T is a type of memory. It\'s an electrically erasable programmable read-only memory (EEPROM) with an 8-bit in-system programmable architecture, which is a type of non-volatile memory. The device has 1 MegaByte density and is operated over a wide voltage range of 1.8 to 5.5V. It is accessed through an 34-pin DIP packaging, allowing easy integration into designs. The device supports low-voltage programming, settling on core voltages as low as 1.8V and is ideal for use in automotive, industrial, home appliance, and OTP applications.
The SST39LF200A-45-4C-EKET is designed to meet the low-cost, high-density requirements of digital cameras and other memory-intensive applications. The device has a fast access time, with Data Polling and Toggle features making it easy for the user to detect the end of a write cycle. It also features self-timed write cycles, allowing it to store data reliably in the most difficult environments. In addition, the device offers protection from accidental programming and can be locked with the Top-Locking feature.
The SST39LF200A-45-4C-EKET has two basic functions, read and write, and is most commonly used for non-volatile storage and retrieval of data. The device uses a four-level cell (FLC) structure to store data bits, which are based on the floating gate transistor array. This four-level cell structure has four charge storage levels, referred to as Level 0, Level 1, Level 2, and Level 3. Each level can store either a \'0\' or a \'1\', thereby providing four combinations (00, 01, 10 and 11) and thus, two bits of data per cell.
The SST39LF200A-45-4C-EKET reads data using a sense amplifier that shifts voltage levels between the four levels of charge stored on the cell array. The data is written to the cell array by programming a node between two bits, thereby setting the voltage level of the two bits. To erase data, the floating gate transistors are charged with a higher voltage, which erases all the stored data.
The SST39LF200A-45-4C-EKET is ideal for both commercial and industrial applications, given its superior endurance, data retention and low cost. It is an excellent choice for numerous applications, such as cameras, gaming systems, automotive and industrial controls, portable handhelds and embedded systems. In addition, the device is particularly suitable for applications that require data protection, such as medical devices, aviation systems, industrial controllers and military equipment.
In conclusion, the SST39LF200A-45-4C-EKET is a type of memory that offers superior endurance, data retention, low cost and reliability. With its wide range of applications and advanced features, the device is an ideal option for meeting various design requirements, such as data protection and in-system programmability.
The specific data is subject to PDF, and the above content is for reference
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