SST39VF1601-70-4C-B3KE

SST39VF1601-70-4C-B3KE is one type of memory device, which is widely used in many electronic fields. With high efficiency and reliable performance, SST39VF1601-70-4C-B3KE has attracted lots of attentions in the industry. This article will discuss the application field and working principle of SST39VF1601-70-4C-B3KE.

SST39VF1601-70-4C-B3KE is a 16Mb Flash memory, organized as 131,072 Bytes, 1,048,576 words or 2,097,152 bits. It is fabricated using the standard CMOS process and is offered in a 39-ball, 7x7 mm Chip-Scale Package (CSP). The 39-ball CSP closely follows the JEDEC outline for 28-pin DIP or SSOP packages.

SST39VF1601-70-4C-B3KE has many applications. In general, it is is suitable for CompactFlash cards, cellular phones,PDAs, modems, digital cameras, PC cards, and others portable digital devices. Much more specifically, it is suitable for communication, consumer electronics, automotive, wireless devices, audio equipment and other fields.

In terms of working principle, SST39VF1601-70-4C-B3KE uses the same core technology as most other flash memories, called floating gate electron device. The device consists of an array of memory cells, with each cell have the ability to store a single bit of information. Each memory cell consists of two transistors, one is a control gate and the other is the floating gate. The voltage applied to the control gate determines whether the cell is programmed (writing) or erased (erasure).

The write process of SST39VF1601-70-4C-B3KE is similar to that of other memories. When the voltage applied to the control gate is high, electrons will be attracted and stored on the floating gate. This action stores a "1" in the cell. When the voltage applied to the control gate is low, the electrons will be driven off from the floating gate, storing a "0" in the cell.

The erasure process of SST39VF1601-70-4C-B3KE works in a similar way. Instead of applying a low voltage to the control gate to drive the electrons off the floating gate, the electrons are instead removed from the floating gate by exposure to ultraviolet light. This action erases any data that is stored on the floating gate, allowing for new data to be written onto the cell.

In conclusion, SST39VF1601-70-4C-B3KE is a type of memory device suitable for many electronic fields such as communication, consumer electronics, automotive, wireless devices and so on. The working principle of SST39VF1601-70-4C-B3KE is based on the floating gate electron device, with each cell having the ability to store a single bit of information. Through the use of high voltage, electrons are attracted and stored on the floating gate to write the data, while ultraviolet radiation is used to erase the data.