SST39SF020A-70-4I-NHE

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SST39SF020A-70-4I-NHE is a type of memory device, particularly a high speed static random access memory (SRAM) chip. It was developed by Silicon Storage Technology Inc and is widely used in different systems, from embedded control to industrial automation. The chip offers a storage capacity of 2MB, a speed of up to 70MHz, a low power consumption of 4mA, and a fast access latency of 35ns. In this article, we will discuss the application field and working principle of the SST39SF020A-70-4I-NHE.

Applications of SST39SF020A-70-4I-NHE

The SST39SF020A-70-4I-NHE SRAM is widely used in various applications. It is commonly used in embedded control systems such as microcontroller, medical equipment, and imaging systems where fast and large data storage is required. It is also used in industrial automation systems because of its high speed and low power consumption. Moreover, the device is suitable for military and aerospace applications, thanks to its high reliability, wide temperature range and high shock and vibration resistance.

Working Principle of SST39SF020A-70-4I-NHE

The SST39SF020A-70-4I-NHE SRAM is a synchronous static random access memory (SRAM) chip. It offers a fast access time of up to 70MHz and a low power consumption of 4mA. The device uses an array of cells, each formed by a pair of transistors and a single bit of storage. The cell is connected to four metal lines, the word line and the bit line, which carry signals to the transistors. For each read cycle, a control signal is sent to the row of cells via the word line. The particular cells that need to be accessed are activated and the content is read from them. The access of data is thus faster than dynamic random access memory (DRAM). The device also has a special feature known as Pseudo-SRAM, which allows efficient switching between bits for faster memory operation.

Conclusion

The SST39SF020A-70-4I-NHE is a high speed static random access memory (SRAM) chip offering a speed of up to 70MHz, a low power consumption of 4mA and a fast access latency of 35ns. It is used in different systems, ranging from embedded control to industrial automation, and has a wide range of applications due to its high reliability, wide temperature range and high shock and vibration resistance. The device works using an array of cells formed by transistors and a single bit of storage, and has a special feature known as Pseudo-SRAM for efficient switching between bits.

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