SST39LF010-45-4C-WHE-T

Series:	SST39 MPF™
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	20µs
Access Time:	45ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package:	32-TSOP
Base Part Number:	SST39LF010

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SST39LF010-45-4C-WHE-T is a part of memory devices which is usually used for high-speed and high-capacity applications. This device is manufactured by Microchip Technology. It can be described as a single-chip memory device that offers 32-megabit (4 megabyte) density, low power consumption and fast speed operations.The SST39LF010-45-4C-WHE-T is built upon the fourth generation of high-speed, high-density Flash technology which has enhanced features over the earlier versions. The device offers a read speed of 45 ns, a write speed of 200 ns, and a data rate of 2 Mbps. The device also features an enhanced architecture, which has improved its power efficiency, allowing the device to operate at a voltage as low as 1.8V. The SST39LF010-45-4C-WHE-T is also capable of operating in a low power mode (DEEP SLEEP) that reduces the device’s power consumption to as low as 20uW.The device also has endurance rating and data retention times of 100K read/ write cycles and 10 years respectively. Such features make the SST39LF010-45-4C-WHE-T suitable for a wide range of applications that require fast data delivery, high density storage and ultra low power consumption.The typical application field for the SST39LF010-45-4C-WHE-T is mainly non-volatile external memory for use in digital systems and electronic devices. This memory device is typically employed in applications such as ATMs, Point-Of-Sale terminals, gaming systems, cellular phones, PDAs, automotive electronics and factory automation systems.The working principle of SST39LF010-45-4C-WHE-T is based on semiconductor technology. The device contains two control signals, one for the input and one for the output. These signals are used to control the flow of data from the device to and from the device. Data in the device will be transferred through the buffer which is connected to the device. The chip will access the appropriate memory location based on the address location provided. Once the data is accessed, it will be written to the buffer register.The device is composed of an array of cells which are interconnected through the cell address bus and data bus. The data bus is used to transfer data from one cell to another while the address bus is used to access the specific cell. When the chip receives an instruction it will process it accordingly and perform the necessary operation.To sum up, SST39LF010-45-4C-WHE-T is a high-speed and high-capacity memory that is used in a variety of applications ranging from ATMs, Point-Of-Sale terminals, gaming systems and factory automation systems. The device offers low power consumption and fast speed operations, making it ideal for applications that require fast data delivery and high density storage. The device works based on semiconductor technology, using two control signals to control the flow of data from and to the device, and an array of cells connected via address and data buses to access the specific memory location.

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