SST39LF401C-55-4C-MAQE

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Memory

The SST39LF401C-55-4C-MAQE is a type of integrated circuit (IC) device known as a non-volatile memory.Nonvolatile memory is capable of saving data when subjected to a loss of power. This device is typically used to feed code into other ICs or CPUs, to provide storage capability within an IC, or to help manage parameters needed for operational control.

Application Fields

The SST39LF401C-55-4C-MAQE provides relatively low-cost nonvolatile memory for applications in a wide variety of arenas. It can be used in telecommunications systems, computer systems, intelligent instruments, and various other types of embedded electronics. More specifically, SST39LF401C-55-4C-MAQE may be employed for code storage within communication interface systems, for boot-up programs in PC BIOS and network switches, for program storage within general purpose CPUs, and as code or parameter memories within various embedded electronics solutions.

Working Principle

Non-volatile memory works by retaining its stored data in the absence of a power source. This is accomplished by maintaining the information within a structure that remains intact even when power is removed. The SST39LF401C-55-4C-MAQE contains a type of nonvolatile memory known as flash memory. Flash memory is widely used in a variety of situations, many of which are associated with electronics. In the case of this device, the flash memory is composed of a series of cells which are used to store data.

Within each cell of the SST39LF401C-55-4C-MAQE, there is a field effect transistor (FET) which functions to control the amount of electrical charges stored within the cell. An electrical charge is then applied to the FET to program a particular value into the cell. The charge-holding capability of the cell is then used to remember the programmed value even when power is removed, thus allowing the device to maintain its stored data.

Programming of the SST39LF401C-55-4C-MAQE\'s flash memory is accomplished through its eight parallel pins via an input voltage that is within an appropriate range. Specific functional parameters, such as the amount of wait time between read and write operations or the total number of write cycles, can also be configured using specific logic levels on some of the device\'s pins.

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