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Memory

SST39LF512-45-4C-NHE-T is a 512Mbit (64Mx8) CMOS Multi-purpose Flash memory device. This memory device is ideal for applications that require high non-volatile storage capacity with a simple, low-cost interface that requires minimal support circuitry.

Application Field

SST39LF512-45-4C-NHE-T has a wide range of applications. It is commonly used in embedded systems, system-on-chip, board-level designs, and consumer electronics application. Typical applications include device code storage, boot-up code storage, data logging, file system storage, and multimedia content storage.

The device is also used in portable applications that require low power consumption and small form factors. Because of its small size, low power consumption, and low cost, the memory device is ideal for designing products for mobile phones, personal digital assistants (PDAs), digital cameras, and other handheld products.

Working Principle

SST39LF512-45-4C-NHE-T is an electrically-erasable, programmable memory device with a very simple programming interface. The device is based on an array of non-volatile memory cells, each of which can store one bit of data. It is designed using a MOSFET memory cell architecture, in which each memory cell is made up of two MOSFETs. The two MOSFETs share one source and two drains, forming a cross-coupled transistor pair.

The programming of the memory device is accomplished by applying suitable electrical signals to the appropriate terminals. This causes a charge to be stored in the memory cells, effectively storing a bit of data. The data is written to the memory cells by applying suitable voltages to the memory terminals. To read the data, the voltage of the memory terminals is measured and the corresponding data bit is read.

Conclusion

SST39LF512-45-4C-NHE-T is an ideal memory device for applications that require high non-volatile storage capacity with a simple, low-cost interface that requires minimal support circuitry. The device is based on an array of non-volatile memory cells, each of which can store one bit of data. Programming and reading of this memory device is accomplished by applying suitable electrical signals to the corresponding memory terminals.

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