SST39SF010A-55-4I-NHE-T

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The SST39SF010A-55-4I-NHE-T is a 512kb (64KB x 8-bit) synchronous Flash memory. It is part of a family of Flash memories consisting of 1Mb and 2Mb densities. It’s one of the most widely adopted Flash memory for industrial applications. This memory is ideal for applications requiring a large capacity of non-volatile memory, such as data storage, code storage, and programmable logic designs. This article will discuss the application field and working principle of the SST39SF010A-55-4I-NHE-T memory.

Application Field

The SST39SF010A-55-4I-NHE-T memory is suitable for a variety of embedded systems, such as:

• Automotive safety systems (airbag modules, ABS, powertrain and body controllers)
• Industrial and medical applications (PLCs, process controllers, medical devices)
• Cellular phones, digital cameras and home appliance controllers
• Consumer electronics (MP3 players, set-top boxes and gaming consoles)

The SST39SF010A-55-4I-NHE-T is a popular choice for these applications because it has a low cost, small form factor, and is available in both densities and package sizes to suit specific requirements.

Working Principle

The SST39SF010A-55-4I-NHE-T is a nonvolatile Flash memory. It is powered by a single supply voltage of 3.3V. The memory is designed with an internal programming voltage of 12V and a write cycle time of 200µs, allowing for fast and reliable data storage. The memory can be programmed and erased in a single, simultaneous operation.

The SST39SF010A-55-4I-NHE-T memory has two inputs: Address and Data Bus. The Address Bus allows the memory to distinguish between the program addresses and data addresses. The Data Bus transfers the data from the host controller to the memory. The memory also has two outputs: Program Output and Data Output. The Program Output is used for switching the internal Program Enable signal, which is necessary for programming/erasing the memory. The Data Output transfers the data from the memory to the host controller.

The memory also has two control signals: Vpp (or Program Voltage) and the Chip Enable (CE) signal. The Vpp signal enables the internal programming voltage of 12V and the CE signal activates the memory. The CE signal can be used in combination with the Address Bus to select the desired address.

The SST39SF010A-55-4I-NHE-T memory has a wide temperature range from -40°C to +125°C, making it suitable for use in harsh environments. It also has an endurance of 100,000 cycles, ensuring reliability and stability.

Conclusion

The SST39SF010A-55-4I-NHE-T is a popular choice for a wide range of embedded applications. It is a low cost, nonvolatile memory that is reliable and stable. It has a wide temperature range, making it suitable for use in harsh environments. It is also available in both densities and package sizes to suit specific requirements. The memory has two inputs, two outputs, and two control signals, allowing it to be used in a variety of applications.

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