SST39SF010A-55-4I-WHE-T

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SST39SF010A-55-4I-WHE-T is a type of Memory. It is a serial Flash EEPROM connector that contains proprietary memory cells, a 16-bit address bus, a 32-bit data bus and a 1-bit status flag that supports single cycle read operation. Its power voltage is 3.3V, and it has an operating temperature range between 0-70 degrees Celsius. It is available in a plastic 40-pin package that is lead-free and ROHS compliant.

The memory architecture of SST39SF010A-55-4I-WHE-T is a combination of serial Flash EEPROM and vertical cell structures to support fast access times, high density and reliable operation. Its address space can reach up to 1M words and its read speed can reach up to 30Mb/s.

The application field of SST39SF010A-55-4I-WHE-T includes automotive systems, industrial control, medical, communication and wireless systems. The device is suitable for applications that require stable and reliable operation in extreme conditions or environments with wide temperature ranges. The device is also suitable for applications that require enhanced security, since it has built-in ECC (Error Correction Code) functionality which allows for quick and reliable data storage and retrieval.

The working principle of SST39SF010A-55-4I-WHE-T is based on the write-ability, read-ability and erasability of the memory cells. The memory cells are arranged as a series of vertical layers, with each layer containing a single bit of data. The data is written to the cells in a predetermined sequence in order to create a bit pattern which represents the desired data. To retrieve the data, the device reads the desired bit pattern from the cells and transfers it to a compatible output buffer. The device can also erase the cells to their initial condition by applying a high voltage to the cells.

In summary, SST39SF010A-55-4I-WHE-T is a type of Memory that is suitable for use in automotive systems, industrial control, medical, communication and wireless systems. It is a serial Flash EEPROM that has a 16-bit address bus, a 32-bit data bus, an operating voltage of 3.3V and an operating temperature of between 0-70 degrees Celsius. Its memory architecture combines serial Flash EEPROM with vertical cell structures and it supports fast read speed, large capacity and reliable operation. The working principle of the device is based on the write-ability, read-ability and erasability of the memory cells.

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