SST39SF010A-70-4C-NHE-T Integrated Circuits (ICs) |
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Allicdata Part #: | SST39SF010A-70-4C-NHE-TTR-ND |
Manufacturer Part#: |
SST39SF010A-70-4C-NHE-T |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 1M PARALLEL 32PLCC |
More Detail: | FLASH Memory IC 1Mb (128K x 8) Parallel 70ns 32-P... |
DataSheet: | SST39SF010A-70-4C-NHE-T Datasheet/PDF |
Quantity: | 1000 |
Series: | SST39 MPF™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-LCC (J-Lead) |
Supplier Device Package: | 32-PLCC (11.43x13.97) |
Base Part Number: | SST39SF010A |
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SST39SF010A-70-4C-NHE-T is a type of Memory. It is commonly used in embedded system applications, such as automotive, gaming, network, telecoms, military and aerospace, medical, and consumer electronics. This type of memory is a 4 megabit (512K x 8) single-level cell (SLC) Flash memory. It is designed to provide high performance, reliability and durability in mission critical applications.
The memory has a maximum supply voltage of 5.0V and a 5V write-cycle capability. It has an access time of 70ns, meaning that it can access 8-bit words in 70ns (nanoseconds) with a programmable sector architecture. It also has an on-chip write protection feature and can store data for up to 20 years. The memory offers high speeds up to 100MB/s and is available in various package varieties.
SST39SF010A-70-4C-NHE-T memory\'s working principle is based on Flash technology. Flash memory is a type of non-volatile memory that stores data permanently even when power is turned off. This makes it the ideal choice for embedded applications, as data does not have to be re-written when power is switched off. The memory is characterized by a set of cells that are connected to a fixed set of wordlines and bitlines. These cells store one bit of information, either 0 or 1, and can be programmed or erased as a whole.
The programming and erasing process is done through a tunnel oxide layer on the top of the cell. A voltage is applied to the tunnel oxide layer to create a field that creates electron tunneling. This allows electrons to move the charge into or out of the cells, thus programming and erasing the memory. Once programmed, the memory stores the data until it is erased again. It can read data without having to be re-programmed.
SST39SF010A-70-4C-NHE-T memory is used in a variety of applications, as it offers high performance, high levels of reliability and long lifespan. The memory is ideal for automotive, gaming, network, telecoms, military and aerospace, medical, and consumer electronics applications, as well as any other embedded system applications where space and size are at a premium.
The specific data is subject to PDF, and the above content is for reference
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