Allicdata Part #: | SST39VF020-70-4C-WHE-T-ND |
Manufacturer Part#: |
SST39VF020-70-4C-WHE-T |
Price: | $ 0.64 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 2M PARALLEL 32TSOP |
More Detail: | FLASH Memory IC 2Mb (256K x 8) Parallel 70ns 32-T... |
DataSheet: | SST39VF020-70-4C-WHE-T Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.57753 |
Series: | SST39 MPF™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 2Mb (256K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-TFSOP (0.488", 12.40mm Width) |
Supplier Device Package: | 32-TSOP |
Base Part Number: | SST39VF020 |
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The SST39VF020-70-4C-WHE-T Memory is designed to enhance the electronics system that require increased data-storage capabilities. It is an essential component in today\'s digital world, providing a cost-effective way to store large amounts of data in any electronic system. The SST39VF020-70-4C-WHE-T Memory has a wide range of applications due to its performance capabilities and available storage space.
The SST39VF020-70-4C-WHE-T Memory is a Flash-based memory device. It is a non-volatile storage medium that offers excellent performance and optimum reliability. This type of memory is also referred to as EEPROM (Electrically Erasable Programmable Read Only Memory). Flash memory utilizes floating-gate transistors that are electrically erased and programmed in blocks instead of single bits, resulting in faster erasure and programming times.
This memory can be used in any electronic system that requires large data storage, such as computers, PDAs, cellular phones, tablets, medical equipment and other electronics devices. It is used to store system boot code, application firmware and large amounts of data such as images, music and videos. The SST39VF020-70-4C-WHE-T Memory is capable of data transfer speeds of up to 60MB/s.
The SST39VF020-70-4C-WHE-T Memory consists of an array of floating-gate transistors. These transistors can be programmed by applying a positive voltage to the gate and a voltage of 0V to the drain. The transistors can also be electrically erased by applying a negative voltage to the gate and a voltage of 0V to the drain. This memory is organized in either 8-bit or 16-bit data words that are stored within the same array.
In order to read and write to the SST39VF020-70-4C-WHE-T Memory, the memory controller sends a command sequence to the memory device. The command sequence specifies the memory location and the data transfer direction. Data is then transferred to or from the memory location according to the command sequence.
The SST39VF020-70-4C-WHE-T Memory has a tested maximum operating temperature of +70°C. This makes it an ideal choice for applications where stability and reliability are needed in extreme temperatures. The memory is also RoHS compliant, meaning that it is free from hazardous materials and manufactured with minimal environmental impact.
In summary, the SST39VF020-70-4C-WHE-T Memory is an ideal choice for any application requiring high performance, large data storage and reliable operation in extreme temperatures. Its fast data transfer speed and wide range of applications make it a cost-effective and high-performance choice for any electronic system requiring memory storage.
The specific data is subject to PDF, and the above content is for reference
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