SST39VF200A-70-4C-B3KE-T

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Memory

SST39VF200A-70-4C-B3KE-T is a static random-access memory (SRAM) that is used as a computer memory. SRAM is a type of storage electronics that store data in integrated circuits, and is faster and less expensive than other forms of electronic storage devices. SRAMs are used primarily in high-bandwidth, short-term memory applications such as CPU caches or application registers.

The SST39VF200A-70-4C-B3KE-T is a 16Mbit (Mega-bit) SRAM device with a 4K memory page size. This device is available in 2x8 (polybagged) packages or 20-lead 300mil TSOP or 208-ball BGA packages. The device has a timed write (tw) feature, which enables a single instruction to be written and then held for a fixed period. The device also includes ECRC (Error Correction and Resiliency for Circuitry) for increased device reliability.

The SST39VF200A-70-4C-B3KE-T uses a memory access mechanism known as Cache Mapping. This access method enables data to be stored in and then retrieved from specific memory locations. The device has an access time of 70ns, making it very fast in comparison to other SRAM types. This makes it an ideal choice for applications that require fast access times and high throughput.

The SST39VF200A-70-4C-B3KE-T is ideal for use in embedded applications such as automotive and industrial, medical, and consumer devices. The device operates at 3.3V and is specified for commercial temperature range 0ºC to 70ºC. Its operating voltage range is 2.7V to 3.6V, with a low power consumption of 2.2mW and a write latency of 3 cycles.

The SST39VF200A-70-4C-B3KE-T’s working principle is based on the fact that the charge held in the memory cells stores either 0 or 1 when the bits stored in it are written. The device consists of two parts: the memory cell array and the peripheral logic. The memory cell array stores the data, while the peripheral logic controls data movement and read/write operations to/from the memory cell array.

To store data, the bit line from the array is set high and the word line is activated. This causes the charge in the memory cell to flow onto the bit line, thus forming 1 or 0. A write operation is the reverse of a read operation, where the data on the bit line is switched to the desired 0 or 1 state and then the word line is asserted. The peripheral logic circuits control the address selection, data input/output and timing of the read/write operations.

The SST39VF200A-70-4C-B3KE-T is a versatile and powerful SRAM device that is well suited to a range of applications. Its fast access times and high throughput make it an ideal choice for applications such as automotive and industrial, medical, and consumer electronics.

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