SST39VF401C-70-4I-B3KE

Series:	SST39 MPF™
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	4Mb (256K x 16)
Write Cycle Time - Word, Page:	10µs
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFBGA
Supplier Device Package:	48-TFBGA (6x8)
Base Part Number:	SST39VF401C

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Introduction

SST39VF401C-70-4I-B3KE is a set of integrated circuit chips that are designed primarily for memory equipment and information storage devices. It is based on a static random access memory (SRAM) with a 70-pin pLCC package. This integrated circuit can offer an operational speed of up to 70 megahertz and provides a total storage capability of 4 megabytes. In addition to its high storage capacity, it also offers a wide range of features and reliable performance.

Application Field

The powerful features of this SST39VF401C-70-4I-B3KE memory module make it particularly suitable for a wide range of applications. Its high speed of operation makes it suitable for use in a variety of consumer electronic products such as LCD display screens, digital video recorders, and portable gaming consoles.Programmers can also benefit from the chip’s support for I/O access protocols such as serial peripheral interface (SPI), as well as its wide bus architecture, which enable access and manipulation of external memory devices. Additionally, its wide voltage range of 1.7-2.5V and current consumption of less than 2µA in standby mode make it an ideal choice for applications that require low power consumption.

Working Principle

The SST39VF401C-70-4I-B3KE memory module works based on SRAM technology. SRAM stores data by using multiple transistors and capacitors; the voltage on the transistors and capacitors determines whether they are storing either a 0 or a 1. This memory type allows for fast and reliable read/write operations without the need for refreshing memory cells.The chip\'s wide bus architecture can be used to access and manipulate external memory devices, such as an SDRAM. This architecture allows access to the onboard SRAM using direct memory access (DMA), which can be faster than traditional methods of memory manipulation. The chip also features an error-correction code (ECC) read/write cycle. This cycle verifies the data integrity of the memory content during data write operations, error correction procedures during a read operation, and an automatic refresh rate of up to 20MHz.

Conclusion

The SST39VF401C-70-4I-B3KE memory module is designed to provide reliable and efficient memory storage capabilities for a wide range of applications. Its wide bus architecture, error-correction code cycle, and ultra-low power consumption are just some of the features that make it an ideal choice for embedded systems. With its powerful features and high speed of operation, the SST39VF401C-70-4I-B3KE is a great choice for memory and information storage devices.

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