SST39WF800B-70-4I-C2QE

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SST39WF800B-70-4I-C2QE is a type of memory product developed by Silicon Storage Technology, Inc. (SST), and it is classified as DDR (Double Data Rate) SDRAM (Synchronous Dynamic Random Access Memory). The SST39WF800B-70-4I-C2QE is a specialized type of DRAM (Dynamic Random Access Memory) designed for use in embedded systems. It is ideal for applications that require low power consumption, high speed, and excellent reliability.

The SST39WF800B-70-4I-C2QE is an 8Mb (megabyte) DDR SDRAM device. It consists of an 80-pin, one-sided lead-free, steel-tape-carrier package. The module has a 16Mb physical memory array, which can be accessed using up to four random bits. The device also features a performance mode, which allows for faster access times and lower power consumption.

The SST39WF800B-70-4I-C2QE is a versatile memory product, as it supports a number of applications. It is suitable for digital signal processing and real-time applications, such as digital cameras, routers, and telephone systems. It is also suitable for industrial systems and system-on-chip (SoC) applications.

The SST39WF800B-70-4I-C2QE is a reliable memory device, as it is designed to withstand a wide range of environmental conditions, including extreme temperatures and humidity. It also has excellent signal integrity, as it is designed to eliminate indaects and crosstalk. Additionally, the device provides high throughput, as it supports up to 133MHz of clock frequency.

The SST39WF800B-70-4I-C2QE is a highly efficient memory device. It features a suite of built-in features, including data-scrubbing, refresh command, and 256-bit error correction code. Additionally, it supports industry-standard interfaces, such as Joint Test Action Group (JTAG) and I2C. Furthermore, the device supports in-system programming, which allows for fast and efficient maintenance of the memory device.

The working principle of the SST39WF800B-70-4I-C2QE memory device is similar to that of most memory devices. It is based on the concept of electrical conductivity, whereby electrical signals are sent between elements of the device in order to store and retrieve data. The device is controlled by a series of signals, which supply information to the device such as the active address, chip select, and write enable signals. When these signals are activated, the device then stores or retrieves data, depending on the type of signal used.

The SST39WF800B-70-4I-C2QE is a highly versatile memory device, as it offers a number of features and excellent performance. It is ideal for use in a wide range of applications, including digital signal processing, real-time systems, industrial systems, and SoCs. Additionally, its built-in features, such as data-scrubbing, refresh command, and error correction code, ensure that the device offers reliable and efficient performance. The device\'s working principle is based on the concept of electrical conductivity, and it is capable of storing and retrieving data using a series of signals.

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