STDV3055L104T4G Allicdata Electronics
Allicdata Part #:

STDV3055L104T4GOSTR-ND

Manufacturer Part#:

STDV3055L104T4G

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 12A DPAK
More Detail: N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface...
DataSheet: STDV3055L104T4G datasheetSTDV3055L104T4G Datasheet/PDF
Quantity: 1000
2500 +: $ 0.21967
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 104 mOhm @ 6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STDV3055L104T4G is a subminiature surface-mount N-Channel Enhancement Mode MOSFET in a SOT-23 package featuring Low ON Resistance and Low Gate Charge, thereby making it suitable for a wide range of applications. They are AC and DC switched, have fast-switching speeds and are suitable for use in high-frequency switching and high-voltage circuits. This device is designed for low-power switching, logic level shifting and headphone amplifiers.The principles of operation of MOSFETs are based on the MOSCAP (Metal-Oxide Semiconductor Capacitors), a three-layer semiconductor structure. The MOSCAP consists of two metal electrodes and an oxide-insulator layer between them. When a source of electrons is applied to the gate electrode, it induces an electric field in the oxide layer, resulting in a current flow (or pulsed current) through the channel. This current is known as the drain current and is regulated by the gate voltage. The source-drain voltage and the gate voltage can be adjusted to control the size of the current flowing through the MOSFET, thus allowing for the switching of an electrical signal.The STDV3055L104T4G has been designed to provide optimum performance in applications that require low on-resistance and extremely low gate charge. In terms of power dissipation, the device has a maximum power dissipation rating of 500mW which is suitable for low power requirements. Its small footprint and its low on-resistance of 30mOhm make it ideal for switching in audio, low-power logic, interfacing with DACs, LED drivers and other high frequency circuits.As for its applications, the STDV3055L104T4G has been used in a variety of applications including headphone amplifiers, DC/AC switching, and low-voltage level shifting. The device can also be used to provide feedback in surface mounted circuit boards. Furthermore, it can be used to provide analog control in power management applications due to its low gate charge enabling it to be switched off and on quickly.Overall, the STDV3055L104T4G is an excellent option for those who require small packages and low on-resistance. Its low gate charge and maximum power dissipation rating make it an ideal choice for audio and controller applications. Additionally, its features make it suitable for switching and level-shifting applications.

The specific data is subject to PDF, and the above content is for reference

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