Allicdata Part #: | 497-3170-5-ND |
Manufacturer Part#: |
STE48NM50 |
Price: | $ 16.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 550V 48A ISOTOP |
More Detail: | N-Channel 550V 48A (Tc) 450W (Tc) Chassis Mount IS... |
DataSheet: | STE48NM50 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 15.08220 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | ISOTOP |
Supplier Device Package: | ISOTOP® |
Mounting Type: | Chassis Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 450W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3700pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 117nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drain to Source Voltage (Vdss): | 550V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STE48NM50 is a power metal oxide semiconductor field effect transistor (MOSFET) which is designed to be used in many different applications. This MOSFET is available in a single package and is suitable for high current, high voltage switching applications.
A metal oxide semiconductor field effect transistor (MOSFET) is an important part of much of the modern digital electronics. In this type of transistor, the gate terminal controls the width of the channel that carries electrical current between the source and drain terminals. It is because of this unique feature that MOSFETs are widely used in power switching applications since they offer very low power loss when compared to other types of solid-state transistors. This makes them very efficient in applications that require high currents.
The STE48NM50 is designed for a wide range of high-voltage switching applications. This MOSFET can handle voltages up to 650V and can handle currents up to 40A. It has a large dielectric withstanding voltage of 200V and a high breaking down voltage. Additionally, this MOSFET has low reverse recovery time which helps to reduce EMI noise.
The working principle of the STE48NM50 is relatively straightforward. When the negative gate terminal is applied with a voltage, the electrical current can flow freely between the source and drain terminals. When no voltage is applied, the electric current cannot flow. This allows the transistor to switch electrical current on or off depending on the voltage applied to the gate terminal.
The STE48NM50 is a very versatile and efficient MOSFET making it suitable for a wide variety of applications. These include power converters, motor control circuits, DC-DC converters, current and voltage regulators, battery charger circuits, power amplifiers and lighting controllers. It is also used in battery management, wireless communication systems and high current switching applications.
In conclusion, the STE48NM50 is a single package power MOSFET with a number of features that make it suitable for a range of different applications. Its gate terminal controls the width of the electric current channel to enable on/off switching. Furthermore, its high voltage, high current, and low power loss capabilities make it suitable for a number of high current switching applications.
The specific data is subject to PDF, and the above content is for reference
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