STE60N105DK5 Allicdata Electronics
Allicdata Part #:

STE60N105DK5-ND

Manufacturer Part#:

STE60N105DK5

Price: $ 19.82
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: ISOTOP PARALL.
More Detail: N-Channel 1050V 46A (Tc) 680W (Tc) Chassis Mount I...
DataSheet: STE60N105DK5 datasheetSTE60N105DK5 Datasheet/PDF
Quantity: 1000
100 +: $ 18.02680
Stock 1000Can Ship Immediately
$ 19.82
Specifications
Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 680W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6675pF @ 100V
Vgs (Max): ±30V
Series: MDmesh™ DK5
Vgs(th) (Max) @ Id: 5V @ 100µA
Rds On (Max) @ Id, Vgs: 120 mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drain to Source Voltage (Vdss): 1050V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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A STEP60N105DK5 is an N-channel enhancement field-effect transistor that improves the performance of digital and analog circuits. This device is commonly used in motor control, power conversion, general purpose switch and amplifier applications.

The STEP60N105DK5 is an N-channel MOSFET transistor with a Drain-Source voltage of 60 V and a Gate-Source voltage of 15 V. This device has a on-state resistance of 8 mΩ and a maximum drain current of 105 A. It is available in a TO220AB package whose dimensions are 42 x 21.4 x 12.4 mm.

The working principle of the STEP60N105DK5 is based on the alteration of electrical properties by applying an external field. This device consists of two regions: the source and the drain. A Gate electrode is provided in between these regions across which an electric field is created by applying a Gate voltage. This field modulates the conductivity between the two regions by altering the width of the conducting channel.

In on-state condition, the electrical current flow between the two regions is governed by the width of the conducting channel and hence by the amount of Gate voltage provided. A small increase in Gate voltage causes a large proportionate increase in the channel width and the channel becomes highly conducting. This phenomenon is known as enhancing effect and results in the predominant flow of current between the two regions.

On the other hand, in off-state condition, the steps taken to reduce the Gate voltage results in a decrease in the channel width and a decrease in the electrical current. This leads to a further decrease in the conduction between the two regions and the device is considered to be in an off-state.

This working principle makes the STEP60N105DK5 useful for high power analog applications where high operating frequencies and wide bandwidths are required. This device can also be used in RF switching applications and for switching between two voltages. It can also be used for controlling the current for various motors and for various industrial applications.

In conclusion, the STEP60N105DK5 is an excellent N-channel enhancement field-effect transistor that improves the performance of digital and analog circuits. This device finds its applications in motor control, power conversion, general purpose switch and amplifier applications as well as in RF switching applications.

The specific data is subject to PDF, and the above content is for reference

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