
Allicdata Part #: | 497-3172-5-ND |
Manufacturer Part#: |
STE70NM50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 70A ISOTOP |
More Detail: | N-Channel 500V 70A (Tc) 600W (Tc) Chassis Mount IS... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | ISOTOP |
Supplier Device Package: | ISOTOP® |
Mounting Type: | Chassis Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 600W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 266nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
One of the most popular types of modern transistors is the Semiconductor Field Effect Transistor, or FET. FETs are transistors that have an insulated gate that stands between the source, drain, and gate terminals. The insulated gate – also referred to as a gate oxide layer – allows for a low power control of current flow in the device. This article will provide an overview of the STE70NM50, a type of FET, as well as discuss its applications and working principle.
What is the STE70NM50?
The STE70NM50 is a power Field Effect Transistor (FET) designed for use in high–power switching applications. It is a single, N–channel MOSFET transistor, with a V DS of 70 V and an RDS(on) of 14 mΩ. The FET is offered as a low–power packaged device in an 8 x 8 QFN package and in a 9 x 9 LLP package.
STE70NM50 Application Field
Due to its excellent performance characteristics, the STE70NM50 is ideal for high power switching applications. It is highly suitable for use in multiple industries, including consumer electronics, automotive, industrial and medical electronics. The advantages of using the STE70NM50 for high power applications include lower static losses and true voltage on–state operation. It is also suitable for use in switching power supplies, lighting control systems, air conditioning systems and motor controllers.
STE70NM50 Working Principle
The working principle of the STE70NM50 is based on its MOSFET configuration. In this type of FET, the gate is insulated from the source and drain, meaning that an external voltage is required to turn on the transistor. This voltage is applied to the gate, resulting in current flowing through the channel between the source and drain terminals. By controlling the voltage applied to the gate, the amount of current flowing through the channel can be varied.
The STE70NM50’s low power consumption makes it ideal for applications that require low static losses. The FET can also handle high power switching without sacrificing performance. It is also able to handle higher voltages than other MOSFETS, making it a great choice for high power applications.
Conclusion
The STE70NM50 is a single, N–channel MOSFET power FET designed for use in high–power switching applications. The device is ideal for use in a range of industries, including consumer electronics, automotive, industrial and medical electronics. The low static losses and true voltage on–state operation makes it an ideal solution for applications such as switching power supplies, lighting control systems, air conditioning systems and motor controllers. The working principle of the FET is based on its MOSFET configuration; current flow is controlled by the external voltage applied to the gate.
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