STE88N65M5

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The STE88N65M5 is a high voltage, fast switching, N-channel enhancement mode MOSFET transistor. It is manufactured with ST’s advanced planar technology and avalanche energy feature. In this article, we discuss the application field and working principle of the STE88N65M5.

The STE88N65M5 brings with it a wide range of components and performance characteristics that make it an ideal choice for many applications. These include motor control, DC-DC converters, polarity reversal, switches and in-line power control. Its high voltage and fast switching capabilities make it a good choice for power management and automotive applications. The device can also be connected in parallel to form a load switch or used as a programmable current source in a variety of circuits including AC/DC converters and power supplies.

The STE88N65M5 is also suitable for use as a high-voltage transient suppressor in overvoltage transient protection applications. Its extended drain-source breakdown voltage (BVdss) of +/- 500V and low gate threshold voltage of +/- 2.0V make it an ideal choice for load switching and polarity reversal in low voltage applications.

The device is also suitable for high frequency switching applications due to its low on-resistance and low gate-source capacitance. This device also has a low input and output capacitance, making it ideal for use in connections with high-speed signal processing and long-distance signal transmission.

The STE88N65M5 works on the effect of metal-oxide semiconductor (MOS) technology. It is a unipolar transistor and composed of four layers. The layers are the gate, source and drain regions, and a layer of silicon dioxide (SiO2). In this MOSFET, the gate is insulated from the other 3 regions. The electric field generated by the gate terminal allows or blocks the flow of electrons through the source-drain channels. This flow of electrons is then regulated by the voltage difference between the gate and source terminals.

When the gate-to-source voltage (VGS) is less than the threshold voltage (Vth) of the device, the device is in the cutoff region and no current flows through the channel. This means the device is OFF. When the VGS is increased over the threshold voltage, the device enters into the active region and electrons start to flow between source and drain. This ON kernel drive current from the drain to the source and the device is then said to be ON. If a negative drain-to-source voltage (VDS) is applied, the negatively charged channel carriers will be attracted to the negative terminal and leave the channel, which results in reverse conduction, or ‘pinch-off’.

The STE88N65M5 also exhibits high power dissipation abilities and good thermal performance, owing to its low on-resistance RDS(ON) and Tjmax of 175°C. The device is also suitable for high-speed switching, as its gate-source capacitance is low. Its maximum drain current is 8.8A, with a total power dissipation of 8.2W.

In conclusion, the STE88N65M5 is a high voltage, fast switching N-channel enhancement mode MOSFET transistor which is suitable for a wide range of applications. It is manufactured using ST’s advanced planar technology and avalanche energy feature. It can be used for motor control, DC-DC converters, polarity reversal, switches and in-line power control. It is also suitable for high frequency switching applications due to its low on-resistance and low gate-source capacitance.

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