STH52N10LF3-2AG Allicdata Electronics
Allicdata Part #:

STH52N10LF3-2AG-ND

Manufacturer Part#:

STH52N10LF3-2AG

Price: $ 0.69
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 100V 52A H2PAK-2
More Detail: N-Channel 100V 52A (Tc) 110W (Tc) Surface Mount H2...
DataSheet: STH52N10LF3-2AG datasheetSTH52N10LF3-2AG Datasheet/PDF
Quantity: 1000
1000 +: $ 0.63032
Stock 1000Can Ship Immediately
$ 0.69
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: H2Pak-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 400V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V
Series: STripFET™ F3
Rds On (Max) @ Id, Vgs: 20 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STH52N10LF3-2AG is a type of field effect transistor (FET), specifically a metal oxide semiconductor field effect transistor (MOSFET). As a single device, it is a four-terminal electronic switching device. All four terminals are labeled: drain (D), gate (G), source (S), and substrate (sub). The STH52N10LF3-2AG can be used as a switch, amplifier, voltage regulator, or a power supply controller.

The STH52N10LF3-2AG works by controlling the voltage of the drain and source. The gate is connected to a potentiometer, allowing for the adjustment of the drain and source voltage. This adjustment and variation of the drain and source voltage is what gives the STH52N10LF3-2AG its flexibility. By using the gate voltage to control the drain voltage, a user can either increase or decrease the resistance between the drain and source.

The STH52N10LF3-2AG is typically used in power management applications, such as those found in automotive systems. By adjusting the gate voltage, the STH52N10LF3-2AG can be used to control the current flow in automotive systems, thus enabling the electronic control system of the car to respond faster, consume less power, and be more efficient overall. Furthermore, the STH52N10LF3-2AG can be used to regulate the voltage in auto atmosphere controllers. For example, the STH52N10LF3-2AG can be used to increase or decrease the air-conditioning and heating capabilities of a car.

When using the STH52N10LF3-2AG in automotive systems, the device must be placed in a manner that ensures proper thermal management. The transistor must be placed in a way that allows for proper cooling and heat sinking, for without proper cooling, the device may overheat and suffer from electrical products such as shorts or open circuits. That being said, the STH52N10LF3-2AG has been designed to be extremely rugged, allowing it to withstand high current and voltage loads that may be found in automotive systems.

In conclusion, the STH52N10LF3-2AG is an effective and efficient single-device field effect transistor whose primary application is in the automotive industry. Due to its adjustable gate voltage, the STH52N10LF3-2AG can be used to regulate the current and voltage levels in auto power systems. Furthermore, its rugged design allows the device to be used in extreme environments without the need for worrying about thermal management.

The specific data is subject to PDF, and the above content is for reference

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