
Allicdata Part #: | 497-16316-2-ND |
Manufacturer Part#: |
STH6N95K5-2 |
Price: | $ 0.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 950V 6A |
More Detail: | N-Channel 950V 6A (Tc) 110W (Tc) Surface Mount H2P... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.89000 |
10 +: | $ 0.86330 |
100 +: | $ 0.84550 |
1000 +: | $ 0.82770 |
10000 +: | $ 0.80100 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | H2Pak-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 1.25 Ohm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 950V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STH6N95K5-2 is a single-gate, N-Channel MOSFET transistor that was released in 2019 by prominent FET and MOSFET supplier STMicroelectronics. Designed as a low-cost option for high-performance applications, it features an advanced technology that delivers low on-resistance. This makes the STH6N95K5-2 significantly more suitable for use in high-speed power switching applications compared to other, more traditional options.
At its core, the STH6N95K5-2 features an advanced fifth-generation silicon technology. This allows it to deliver high-performance power switching performance that is ideal for applications that require low on-resistance and fast switching time. As such, it can be used in a number of applications, including motor control, DC-DC converters, solenoid drivers, and general-purpose switching. Additionally, the STH6N95K5-2 is designed to operate over an extensive -55°C to 175°C temperature range.
To ensure reliable operation, the STH6N95K5-2 also features built-in ESD protection. This provides a level of protection that is much better than other, similar devices. Additionally, it also features a wide gate-source voltage range, from +2V to +18V. This contributes to a more versatile range of applications, allowing it to be used in more varied high-performance power-switching scenarios.
In terms of the actual workings of the device, the STH6N95K5-2 is an N-Channel field-effect transistor (FET). In an N-Channel FET, current can flow from the drain to the source, but the flow is controlled by a voltage on the gate. This type of transistor is widely used in both analog and digital applications, and is significantly more efficient than its bipolar equivalent. In terms of operation, the device works as follows: when a positive voltage is applied to its gate, the STH6N95K5-2 will turn on, allowing current to flow from its drain to its source. When the gate voltage is removed or reduced, the device will turn off and the flow of current will be interrupted.
As a result, the STH6N95K5-2 is an ideal choice for any high performance, low on-resistance applications that require reliable operation over an extended temperature range. This makes it an excellent choice for a wide variety of applications, including automotive applications, medical applications, and industrial applications. For its diverse range of features, low on-resistance performance, and excellent ESD protection, the STH6N95K5-2 makes an excellent solution for high-performance power switching scenarios.
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