STI40N65M2

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The STI40N65M2 is a high-voltage, high-speed, N-channel insulated gate bipolar transistor (IGBT), developed and marketed by STMicroelectronics. It has an extended voltage (EVC) of 1700 V, a charging inductive load (CPL) of 650 V, and a blocking breakdown voltage (BVD) of 850 V. This IGBT was designed specifically for high-voltage applications and is capable of switching large currents and has a very low parasitic capacitance. In addition, the STI40N65M2 is a low-power device and can be operated at a temperature range between −55°C and 150°C.

Application Field

STI40N65M2 is designed for use in a wide range of high-voltage power conversion applications such as UPS systems, motor drives, electric vehicles, frequency converters, uninterruptible power supplies (UPS), welding machines, and in relays. It can also be used in various power supply modules for the transportation sector and for the industrial sector.

The STI40N65M2 is a robust, high current device which can provide efficient and reliable power conversion for high voltage applications. It is capable of switching large currents (up to 12A) with low losses, and this makes it suitable for use in electric motors, welding machines, UPS systems, robotics and other power conversion applications. The robust design ensures excellent thermal performance and high reliability.

Working Principle

The STI40N65M2 is an N-channel insulated gate bipolar transistor (IGBT) with an extended voltage rating of 1700 V, and a blocking breakdown voltage of 850 V. It is designed for high-voltage power conversion applications, such as motor drives, inverters, frequency converters, UPS systems, and welding machines. The device is designed to switch large currents with low losses and has a very low parasitic capacitance. In addition, the device operates between a temperature range of -55°C to 150°C.

The STI40N65M2 IGBT operates on a principle similar to that of a field-effect transistor (FET). The IGBT is a three-terminal device with an insulated gate on one side and a collector on the other side. The gate terminal is used to control the on and off state of the device, whereas the collector terminal is used to charge and discharge the IGBT during operation. When the gate terminal is energized, current is allowed to flow from the collector to the emitter, which drives the operation of the device.

The STI40N65M2 is a high-current device, and is capable of handling up to 12A. The device has been designed with a rugged structure, which ensures excellent thermal performance, and a low parasitic capacitance. This allows the device to achieve high efficiency and reliable operation in a variety of high voltage applications.

The STI40N65M2 has a wide range of protection features, including overcurrent, overvoltage, overtemperature, and undervoltage protection. Additionally, the device is designed with a high-speed turn-on and turn-off time, enabling it to operate in fast-switching applications. This makes the device suitable for use in electric motor drives, inverters, UPS systems, and frequency converters.

The STI40N65M2 IGBT is an ideal choice for a wide range of high-voltage power conversion applications. It is capable of switching large currents with low losses, and its robust design ensures excellent thermal performance and excellent reliability.

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