STI76NF75

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3700pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	160nC @ 10V
Series:	STripFET™ II
Rds On (Max) @ Id, Vgs:	11 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STI76NF75 MOSFET is a seventy-amp, 500V Through Hole Power MOSFET packed in an industry standard TO-220 package. It is designed for use in a variety of power management applications and switching environments, including high frequency switching, discrete switch applications and dynamic control. The STI76NF75 is rated for a current range of 8A to 72A, with a maximum voltage of 500V, meaning that it is suitable for applications that require high current density, high efficiency and power savings.The STI76NF75 MOSFET utilizes the third generation patented Substrate-Body Isolation to dramatically reduce the body capacitance of the device. This low-capacitance structure results in excellent dynamic characteristics such as frequency response, switching times, and energy control. The low capacitance also provides a very low input capacitance, resulting in a high input impedance along with low turn-on and turn-off times. In addition, the low power consumption and low gate drive requirements make the device suitable for many high frequency switching applications, such as motor drives, high-speed switching power supplies, UPS systems and control systems.The STI76NF75 utilizes a self-conducting, trench gate structure along with advanced processing technology to provide superior performance. It features a centrally located integrated gate with minimal self-heating and superior noise immunity. The device is designed to operate in a high-Vds condition while still providing excellent performance and fast response times. It utilizes a low-resistance source lead and high-current carrying capability, making it suitable for low-voltage, high-current applications.The STI76NF75 is an enhancement mode MOSFET and thus operates in an active mode when the gate voltage is higher than the source voltages. Moreover, this device utilizes a channel resistance of approximately 1ohm and an on-state drain to source voltage of approximately 1V. The low R_D and low V_DS means that the STI76NF75 operates very efficiently in low voltage, high current applications and can easily handle the power demand of such systems.Due to its high power handling capabilities and low-capacitance structure, the STI76NF75 is often used in high frequency switching, dynamic control and HOT swap applications. The device is also well suited for use in high speed signal processing and power control circuits. For example, the STI76NF75 can be used in Class D audio amplifiers, as well as in power supplies and communication systems.In terms of safety features, the STI76NF75 features built-in ESD protection to ensure safety and reliability in harsh conditions. It also includes a temperature protection function that prevents the device from overheating under certain conditions. Overall, the STI76NF75 is an excellent choice for high frequency switching, dynamic control and power management applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description