| Allicdata Part #: | 497-11333-5-ND |
| Manufacturer Part#: |
STI8N65M5 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 650V 7A I2PAK |
| More Detail: | N-Channel 650V 7A (Tc) 70W (Tc) Through Hole I2PAK |
| DataSheet: |  STI8N65M5 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 70W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 690pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Series: | MDmesh™ V |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STI8N65M5 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is used in many common applications. It can be used in power supplies, motor control, logic circuits, and even small circuit boards. It is a single transistor, meaning that just one polarity can be applied to the gate and source.
MOSFETs are used in applications where more efficiency is required than a traditional transistor can provide. A regular transistor is a bi-polar device, meaning that it has two separate components, a source and a drain. The source is the area that provides power to the device, and the drain is the area where the current is able to pass through. The MOSFET replaces these two components with a single one, which is much more efficient.
The STI8N65M5 is a powerful MOSFET, with a high drain-source voltage of 700V, low Rds(on) of 1.175 ohm, and on-resistance of 3mohm. This makes it a great choice for applications such as switchgear and overload protection, where it can be used to carry high currents without a significant voltage drop across the MOSFET. It can also be used for motor control and power management, as it can handle both high and low current applications.
The working principle of the STI8N65M5 is based on the basic principles of MOSFET operation. It has an insulated gate that is used to control the flow of electrons through the device. When a voltage is applied to the gate, it attracts or repels charges from the body, allowing current to travel through the device in either direction. This makes it ideal for applications that require a fast response time, as the MOSFET can switch between the two states almost immediately.
The STI8N65M5 can be used in a variety of different applications, from switchgear to motor control, and even more specialized applications such as power management. Its high drain-source voltage rating, low Rds(on), and robust operation make it a popular choice among engineers and hobbyists alike. As a single transistor, it can easily be used in applications that require quick response times, as well as those that require more precise control over current flow.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| STI8N65M5 | STMicroelect... | 0.0 $ | 1000 | MOSFET N-CH 650V 7A I2PAK... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...