Allicdata Part #: | STI90N4F3-ND |
Manufacturer Part#: |
STI90N4F3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 40V 80A I2PAK |
More Detail: | N-Channel 40V 80A (Tc) 110W (Tc) Through Hole I2PA... |
DataSheet: | STI90N4F3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STI90N4F3 is a single N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) featuring high-drain current, low on-resistance, low gate-charge and fast switching. This MOSFET is used in a number of applications, including power supplies, dc-dc conversion, motor controls, inverters and uninterruptible power supplies.
The STI90N4F3 is a commonly used device in power electronics applications due to its high-drain current, low on-resistance and low gate-charge. It is a three-pin device, with the source and drain pins being located at opposite ends of the transistor and the gate pin located in the middle. The source and drain pins are used to carry the high current load, while the gate pin is used to control the amount of current that is allowed to flow through the device.
Unlike bipolar junction transistors (BJT), which rely on current flow from the base to the collector to turn the device on, the STI90N4F3 is an enhancement-mode MOSFET, which means that it requires a voltage applied to the gate in order to allow current to flow from the source to the drain. This voltage is referred to as the “gate voltage” or “gate threshold voltage”. This voltage is typically between 4V and 8V, depending on the type of MOSFET.
The STI90N4F3 is also a voltage-driven device, meaning that it is sensitive to the voltage applied across its drain-source terminals (VDS). In power applications, the STI90N4F3 is typically used as a switch, allowing current to flow when a certain voltage is applied across its drain-source terminals and then turning off when that voltage is removed or reduced.
The STI90N4F3 is also a “logic-level” device, meaning that it will only turn on if the voltage applied to the gate is high enough. If the voltage applied to the gate is too low or the gate terminal is left open (not connected to anything), then the device will remain off. This makes the STI90N4F3 ideal for low-power applications, such as microcontroller- or logic-based circuits.
In addition to its use in power applications, the STI90N4F3 can also be used in digital circuits. In such circuits, the gate terminal is used to control the state of the device, enabling or disabling the flow of current between the source and drain pins. Because of its fast switching speed and low switching voltage, the STI90N4F3 is ideal for these types of applications.
In summary, the STI90N4F3 is an enhancement-mode single N-channel MOSFET featuring high-drain current, low on-resistance, and low gate-charge. It is commonly used in power applications such as power supplies, dc-dc converters and motor controls, but is also suitable for use in digital circuits due to its fast switching speed and low switching voltage.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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STI90N4F3 | STMicroelect... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A I2PAK... |
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