| Allicdata Part #: | 497-16488-2-ND |
| Manufacturer Part#: |
STL50DN6F7 |
| Price: | $ 0.49 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 60V 57A POWERFLAT |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 57A (Tc) 62.5W... |
| DataSheet: |  STL50DN6F7 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.49000 |
| 10 +: | $ 0.47530 |
| 100 +: | $ 0.46550 |
| 1000 +: | $ 0.45570 |
| 10000 +: | $ 0.44100 |
| Series: | STripFET™ |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 57A (Tc) |
| Rds On (Max) @ Id, Vgs: | 11 mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1035pF @ 30V |
| Power - Max: | 62.5W |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | PowerFlat™ (5x6) |
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The STL50DN6F7 is a logic level FET array. It is a monolithic low on-state resistance N-channel technology device in a SOT-193 (SC-70) Surface-Mounted Device (SMD) package. The device has two FETs with independent gates and sources. Each FET is capable of blocking up to 20V. It has an on-resistance as low as 10Ω and a maximum operating temperature of 175°C.
The STL50DN6F7 has a number of applications, including power supply regulation, power distribution, automotive electronics, motor control, and electrostatic discharge (ESD) protection. It is particularly useful in low off-state leakage current and high load current applications. It is also used for undershoot protection, overshoot protection, and fast switching applications. The device also has some applications in consumer electronics, lighting, and test and measurement.
The working principle of the STL50DN6F7 is based on the effects of depletion-mode MOSFETs. The gate of the MOSFET is connected to its source, and the source is connected to a negative voltage to turn the FET off. The negative voltage is then partially or completely removed to turn the FET on. The device also employs charge control, which allows the FET to stay on during transients, such as when switching between two different voltage levels. This allows the device to have a low on-state resistance and fast switching capability.
The STL50DN6F7 is a useful device for applications that require a low on-state resistance, fast switching, and a high blocking voltage. It is capable of blocking up to 20V, and its on-resistance is as low as 10Ω. Its charge control feature allows it to stay on during transients and provides fast switching capability. Its high reliability and operating temperature make it suitable for use in many different applications, including power regulation, automotive electronics, and ESD protection.
The specific data is subject to PDF, and the above content is for reference
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