STL57N65M5 Allicdata Electronics

STL57N65M5 Discrete Semiconductor Products

Allicdata Part #:

497-13520-2-ND

Manufacturer Part#:

STL57N65M5

Price: $ 4.43
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 4.3A 8POWERFLAT
More Detail: N-Channel 650V 4.3A (Ta), 22.5A (Tc) 2.8W (Ta), 18...
DataSheet: STL57N65M5 datasheetSTL57N65M5 Datasheet/PDF
Quantity: 1000
1 +: $ 4.43000
10 +: $ 4.29710
100 +: $ 4.20850
1000 +: $ 4.11990
10000 +: $ 3.98700
Stock 1000Can Ship Immediately
$ 4.43
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (8x8) HV
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: MDmesh™ V
Rds On (Max) @ Id, Vgs: 69 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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STL57N65M5 is an N-channel Enhancement Mode MOSFET transistor designed for advanced high voltage applications. It offers enhanced low RDS(on), avalanche capability, low gate charge and superior switching performance. This N-channel transistor is optimized to produce the highest performance with advanced power management designs. It is developed to meet the user requirements of both high and low side switching application.

Application Field

STL57N65M5 is typically used in high voltage switching applications such as DC-DC converters, IGBT gate drivers, power MOSFET gate drivers, DC motor control, grid-tied inverter, uninterruptible power supply (UPS), and solar inverters. Moreover, it is an ideal choice for high power applications such as brushless motor control, switching regulators, power materials handling and power supplies.

Working Principle

STL57N65M5 is an N-channel Enhancement Mode MOSFET transistor. Its operation depended on enhancing the internal electric field of the transistor itself. When the voltage is applied at the Gate then electric field will be increased, this will in turn allow current to flow from source to drain. This type of transistor has higher gain and is capable of producing higher current than its P-channel counterpart. It is also known for its fast switching performance and high input impedance.

The MOSFET transistor can be operated in two modes. The first mode is the linear or non-saturating mode. In this mode, the drain current will increase linearly with the gate voltage. The second mode is the saturating or cut-off mode. In this mode, the transistor turns off completely and no current can flow between the source and the drain.

The drain current of STL57N65M5 will be large as long as the gate voltage is within the specified range. When the gate is connected to a negative voltage, the current will start to reduce and eventually turn off. The gate voltage threshold can vary from device to device, so it is important to test the device to ensure that it is operating properly.

Additionally, the device also has a body diode which is used to protect the device from high voltage transients. This diode will switch on and provide a path for the current to flow during negative gate voltages.

In summary, STL57N65M5 is an ideal choice for high voltage switching applications in the field of power electronics. It has superior performance, low RDS(on), enhanced avalanche capability and superior switching performance.

The specific data is subject to PDF, and the above content is for reference

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