STL58N3LLH5 Discrete Semiconductor Products

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The STL58N3LLH5 is a single N-channel low side logic level power MOSFET which is commonly used in various applications and industries. This transistor has a drain-source breakdown voltage of 58V and a maximum drain current of 60A. It is a submicron MOSFET with excellent performance when it comes to switching and amplification. This makes it an ideal choice for applications that require high reliability, robustness, and intricate performance, such as automotive, industrial, and consumer electronics.

The STL58N3LLH5 can be used in a wide range of applications such as switching, light load switching, logic level power MOSFETs, low side switches, battery protection circuits, DC-DC converters, and more. It is a commonly used power MOSFET, with fast switching and excellent thermal characteristics which make it an ideal choice for applications that require high reliability, robustness, and intricate performance.

The STL58N3LLH5 has an enhanced channel with a compact package that enables the device to reduce on board space. It has a low gate-drain capacitance (5pF) which is suitable for applications that require low charge injection and fast switching. The device also features an ESD protection of 5 kV to protect against spurious transients in the circuit.

The working principle of STL58N3LLH5 follows the same principles as other MOSFETs. A MOSFET is a field effect transistor that is composed of four terminals – the source, gate, drain, and body. The application of an electric field to the gate changes the conductivity of the source-drain path, thus allowing current to flow through the transistor.

To operate the MOSFET effectively, the applied voltage must be greater than the gate threshold voltage. This will turn on the transistor and allow current to pass through it. The voltage applied to the gate will affect the conductivity of the transistor and also determine the amount of current that can flow through it. The larger the gate voltage, the more current will flow through the transistor.

In addition, the STL58N3LLH5 has low on-resistance (Rds(on)) of just 0.453 Ohm when it is turned on. This allows for higher efficiency operation and less power loss through the transistor. The low on-resistance also offers higher switching performance and reliability.The transistor also has a fast switching speed, which allows it to switch in less than 10ns.

The STL58N3LLH5 is a great choice for applications that require high reliability, robustness, and intricate performance. This single N-channel logic level power MOSFET offers excellent thermal characteristics and efficient power conversion. It is a great choice for many applications and industries that require the highest levels of performance.

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