STL52N25M5 Allicdata Electronics
Allicdata Part #:

497-10783-2-ND

Manufacturer Part#:

STL52N25M5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 250V 28A POWERFLAT
More Detail: N-Channel 250V 28A (Tc) 2.5W (Ta), 110W (Tc) Surfa...
DataSheet: STL52N25M5 datasheetSTL52N25M5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Series: MDmesh™ V
Rds On (Max) @ Id, Vgs: 65 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STL52N25M5 is a type of single, metal-oxide semiconductor field-effect transistor (MOSFET) with a wide range of potential applications. In general, MOSFETs are used to control currents and voltages in power management and high-speed applications such as analog and digital circuits. The STL52N25M5 is an N-channel enhancement mode MOSFET, which means it requires a voltage used to conduct current when the gate-source voltage is low. This transistor features a low on-state resistance and low input capacitance, making it well-suited for high-frequency, high-current applications.

Before delving into the STL52N25M5\'s specific application fields and working principles, it is useful to review the structure and principles of MOSFET operations. A MOSFET is a type of field-effect transistor, which works by controlling a gate-to-source voltage difference. This difference creates an electric field on a gate oxide layer, which in turn controls the flow of current through a channel below the gate oxide layer. The channel width, and therefore the current flowing through the transistor, is directly related to the size of the gate voltage.

In the case of the STL52N25M5 single MOSFET, the 25mΩ 5A (25°C) on-state resistance of its metal oxide semiconductor (MOS) provides a low-resistance channel, allowing the transistor to support large currents and high-frequency switching. Its low input capacitance also enables the STL52N25M5 to support high-speed switching. The 370mΩ (maximum) gate charge at 10V makes the transistor suitable for high-quality power sourcing and providing power to mobile applications.

The STL52N25M5 is particularly well-suited for power-conversion applications due to its low on-state resistance, low input capacitance, and low dissipated power. It can be used in the power conversion circuit of power supplies, adapters, battery chargers, and other types of power management systems. Additionally, because it operates using pulses, rather than continuous currents, the STL52N25M5 can be used in pulse controller circuit designs. Furthermore, due to its low switching noise, the STL52N25M5 can be used in audio circuits and other noise-sensitive equipment.

In conclusion, the STL52N25M5 single MOSFET is well-suited for use in power-conversion and high-speed, high-frequency applications. It has a low on-state resistance and low input capacitance, enabling it to handle high currents and high-frequency switching. Additionally, its low gate charge at 10V makes the transistor suitable for high-quality power sourcing and providing power to mobile applications. Furthermore, the STL52N25M5\'s low switching noise makes it suitable for use in audio circuits and other noise-sensitive equipment.

The specific data is subject to PDF, and the above content is for reference

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