Allicdata Part #: | 497-4364-2-ND |
Manufacturer Part#: |
STN5PF02V |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET P-CH 20V 4.2A SOT223 |
More Detail: | P-Channel 20V 4.2A (Tc) 2.5W (Tc) Surface Mount SO... |
DataSheet: | STN5PF02V Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 450mV @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 412pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 2.5V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 2.1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STN5PF02V power MOSFET is a single-channel, low-on-resistance (RDS) device which can be employed in applications that require both power and low-on operations.
This device is a single-channel Irregular Bonded Capacitor (IBC) type MOSFET, and it utilizes a drain structure called a V-shaped field-effect transistor (VFET) structure to achieve a low On-resistance. This VFET structure also has a faster switching speed and higher on-to-off-ratio than conventional MOSFETs. The VFET also provides improved thermal stability and parasitic capacitance characteristics.
The STN5PF02V is designed to be used in power supply circuits, low voltage applications and in motor driving applications. It can be used to switch motors and/or other loads, and can operate at frequencies up to 20 kHz. This makes the STN5PF02V suitable for high speed switching applications.
The STN5PF02V power MOSFET offers a wide variety of features, including low on-resistance, low output capacitive and low gate driver impedance, as well as input diode and ESD protection. In addition, this device has a very high voltage capability up to 80 volts, which makes it suitable for high power applications.
The working principle of the STN5PF02V is based on the field effect transistor (FET) or semiconductor effect. A FET is a three-terminal device that uses an electric field to modulate the electrical properties of the device. In the case of the STN5PF02V, the gate voltage (Vgs) is used to control the current flow between the drain and source terminals. The gate current is then used to control the amount of current flowing from the drain to the source. This is the main principle behind the operation of the MOSFET.
The STN5PF02V has an On-resistance of only 16 mohm, and its maximum current rating is 15.0 A. The gate driver impedance characteristic of this device is also very low, allowing it to work with low voltage devices. In addition, the STN5PF02V is able to operate from a range of voltage ratings up to 80 volts. This makes it suitable for a wide variety of applications.
The STN5PF02V is an ideal device for use in applications such as power supplies, motor drivers, and low voltage applications. It is a reliable and efficient device, and is suitable for applications that require both power and low on-resistance. In addition, its wide range of features, such as low on-resistance, low output capacitance, and low gate driver impedance, make it a versatile device for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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STN5PF02V | STMicroelect... | -- | 1000 | MOSFET P-CH 20V 4.2A SOT2... |
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