STP200N4F3

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The STP200N4F3 is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a low on-resistance. It is designed to feature high speed switching, low gate charge and low threshold voltage. This device utilizes a proprietary hetero process technology to achieve high performance characteristics while maintaining cost effective pricing. As such, this device is popular in both commercial and industrial applications.

It is manufactured in different packages including surface mount, TO-220, PDIP, SOIC and TO-252. This device offers protection from over-voltage and thermal runaway, making it suitable for automotive and other applications that require robustness. It also features low total gate charge and low on-resistance for high speed switching.

The STP200N4F3 works by utilizing the electric field generated by its gate pin to control the flow of current. By applying appropriate gate voltage, the transistor can be switched on and off, allowing current to flow in the desired direction. The transistor operates as an amplifier or switch by applying a voltage signal to the gate. When a positive voltage is applied to the gate pin, the transistor\'s channel opens up, thus allowing current to flow between the source and the drain pins.

The STP200N4F3 is commonly used in a variety of applications such as load switching, level shifting and signal buffering. It can also be used in power management and controlling motor speed. Furthermore, it can be used for audio amplifier control as well as signal conditioning systems and motor control.

The STP200N4F3 features low on-resistance that is typically between 30mΩ and 350mΩ. This ensures high current amplification with minimal losses. Additionally, it has low input capacitance and low gate charge that allow the device to switch and amplify signals quickly.

This device has a max drain source voltage of 325V and an operating temperature range of -55°C to 150°C. It also has a low threshold voltage which is typically between -1.3V and -3.0V. All these characteristics enable robust operation and also enable the device to be used in sensitive applications that require precise control.

In conclusion, the STP200N4F3 is a N-channel MOSFET that is ideally suited for high speed switching, level shifting, signal buffering and power management applications. It features low on-resistance, low input capacitance and low gate charge with a max drain source voltage of up to 325V.

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