Allicdata Part #: | 497-5019-5-ND |
Manufacturer Part#: |
STP21NM60N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 17A TO-220 |
More Detail: | N-Channel 600V 17A (Tc) 140W (Tc) Through Hole TO-... |
DataSheet: | STP21NM60N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 8.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP21NM60N is an N-channel enhancement mode power field effect transistor (FET) which is specially designed for high-voltage and high-speed switching applications. It is a highly integrated device that is capable of providing the highest level of power MOSFET performance and is well suited for applications in the automotive and industrial markets. This article will discuss the application field and working principle of the STP21NM60N.
STP21NM60N Application Field
The STP21NM60N is a high voltage and high speed switching FET, making it suitable for a range of automotive and industrial applications. For automotive applications, it is an ideal choice for use in DC/DC converters, motor drives, and loads requiring high speed switching. In industrial applications, it is well suited for use in induction heating and other high power applications.
The STP21NM60N also features a very low on-resistance and gate charge, resulting in a very low gate charge and excellent switching performance. This makes it suitable for a wide range of applications including power conversion, motor control, and high speed switching. Additionally, it offers very high noise immunity and high dv/dt immunity, which makes it well suited for use in harsh operating environments.
STP21NM60N Working Principle
The STP21NM60N is an N-channel enhancement mode transistor (MOSFET). It utilizes an insulated gate structure to control the flow of current between the source and drain terminals. The gate is connected to a gate voltage, which controls the threshold voltage, or "on-resistance" of the MOSFET. When the gate voltage is greater than the threshold voltage, the MOSFET is "on" and current flows between the source and drain terminals.
When the STP21NM60N is switched "on," it acts as an open circuit, allowing current to flow freely between the source and drain terminals. When the MOSFET is switched "off," it acts as a closed circuit, blocking current from passing between the source and drain terminals. This allows for very precise control of the current in the circuit, enabling the circuit to be used for high power applications.
Conclusion
The STP21NM60N is a high voltage and high speed switching FET, making it suitable for a range of automotive and industrial applications. It features a very low on-resistance and gate charge, and provides very high noise immunity and high dv/dt immunity, making it well suited for use in harsh operating environments. The STP21NM60N utilizes an insulated gate structure to control the flow of current between the source and drain terminals, enabling precise control of the current in the circuit.
The specific data is subject to PDF, and the above content is for reference
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