STP200N6F3

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The STP200N6F3 is a field effect transistor (FET) designed for high-power switching applications. It is a member of STMicroelectronics\' STMOS family of wide-bandgap (WBG) power semiconductors designed for maximum efficiency and high current handling capability. The STP200N6F3 is ideal for applications such as motor control, high-efficiency switching power supplies, and power conditioning. The device is also capable of operating at higher frequencies and temperatures than conventional silicon-based FETs.

The STP200N6F3 is a single N-channel FET with a maximum drain current of 200A and a breakdown voltage of 200V. It is housed in a 7-lead-pin PowerMESH II package. The device has a total gate charge of 30nC, an on-resistance of 13 mΩ and an input capacitance of 590pF. It is designed for a maximum junction temperature of 175°C and an operating temperature range of -55°C to 175°C.

The operating principle of the FET is based on the electric field produced by a voltage applied between the gate and the source-drain electrodes. This electric field induces a conductivity modulation in the semiconductor channel between the two electrodes. The current flow between the two electrodes is controlled by the voltage applied to the gate. The device has an enhancement mode operation where the FET is off when the gate voltage is zero, and turns on if a positive voltage is applied. The current flow is controlled by the magnitude of the gate voltage.

The device can be used in low-side voltage S-R latch, high side gate drive, high side AC switch, and driver solutions. In a low-side S-R latch circuit, the FET is used to switch the voltage on the low-side MOSFET. The control logic is applied to the input of the FET, allowing for low-voltage and low-power operation. This device can also be used in high side gate driver solutions, which allow the user to drive a high side MOSFET from a low-voltage supply source. The FET can also be used in AC switching solutions allowing a low-side MOSFET to be driven from a high-voltage AC source. The FET is capable of operating at frequencies up to 1MHz and is suitable for applications such as solid-state relays, motor control, and power inverters.

The STP200N6F3 is an ideal device for high-power, high-efficiency applications. Its wide operating temperature range, low on-resistance, and high current handling capability make it an excellent choice for applications where space and power consumption are limited. Its low gate charge and high-frequency operation enable it to offer superior performance and reliability in harsh environments.

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