STP200NF04 Allicdata Electronics
Allicdata Part #:

497-3524-5-ND

Manufacturer Part#:

STP200NF04

Price: $ 2.81
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 40V 120A TO-220
More Detail: N-Channel 40V 120A (Tc) 310W (Tc) Through Hole TO-...
DataSheet: STP200NF04 datasheetSTP200NF04 Datasheet/PDF
Quantity: 1964
1 +: $ 2.81000
10 +: $ 2.72570
100 +: $ 2.66950
1000 +: $ 2.61330
10000 +: $ 2.52900
Stock 1964Can Ship Immediately
$ 2.81
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 310W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP200NF04 is a N-channel and enhancement mode MOSFET that is manufactured by STMicroelectronics. It has a drain current of 20A, a drain-source voltage of 200V, an on-resistance of 5.1Ω, an operating temperature range between -55°C and 150°C, and a package type of TO-220FP. The STP200NF04 is suitable for a wide array of applications, making it a versatile and useful component for a variety of systems.

Application Field

The STP200NF04 is well-suited for load switching, motor control, and DC/DC converter applications. It is especially useful for applications where fast switching is required, such as switching power supplies, motor controllers, and other high-power applications.The STP200NF04 is also extremely robust, so it is capable of a wide range of applications, including high power applications. Its low on-resistance also makes it beneficial in applications where low on-resistance is necessary, such as battery management systems or other applications in which power losses must be minimized.

Working Principle

The STP200NF04 is a Field-Effect Transistor (FET) that operates in enhancement mode. A FET is a voltage-controlled device that operates by controlling the flow of current between the source and drain terminals by using an external electric field. In the STP200NF04, when a voltage is applied to the Gate terminal, it creates an electric field that “enhances” or pulls electrons from the body of the MOSFET, allowing a current to flow from the source to the drain terminals. This process can be reversed by removing the voltage from the Gate, which deactivates the electric field and stops the current flow, thus turning the MOSFET off. In addition to turning the device on and off, the Gate voltage also controls the amount of current that flows through the MOSFET. As the Gate voltage increases, the current flowing through the MOSFET increases. This makes the STP200NF04 ideal for applications that require precise current control.

Conclusion

The STP200NF04 is a versatile and robust N-channel and enhancement mode MOSFET suitable for a wide array of applications where fast switching, high power, and precise current control are necessary. Its low on-resistance and wide temperature range make it an ideal component for battery management systems, and its ability to operate in enhancement mode makes it ideal for load switching, motor control, and DC/DC converter applications.

The specific data is subject to PDF, and the above content is for reference

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