
Allicdata Part #: | 497-3524-5-ND |
Manufacturer Part#: |
STP200NF04 |
Price: | $ 2.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 40V 120A TO-220 |
More Detail: | N-Channel 40V 120A (Tc) 310W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1964 |
1 +: | $ 2.81000 |
10 +: | $ 2.72570 |
100 +: | $ 2.66950 |
1000 +: | $ 2.61330 |
10000 +: | $ 2.52900 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 310W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 90A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP200NF04 is a N-channel and enhancement mode MOSFET that is manufactured by STMicroelectronics. It has a drain current of 20A, a drain-source voltage of 200V, an on-resistance of 5.1Ω, an operating temperature range between -55°C and 150°C, and a package type of TO-220FP. The STP200NF04 is suitable for a wide array of applications, making it a versatile and useful component for a variety of systems.
Application Field
The STP200NF04 is well-suited for load switching, motor control, and DC/DC converter applications. It is especially useful for applications where fast switching is required, such as switching power supplies, motor controllers, and other high-power applications.The STP200NF04 is also extremely robust, so it is capable of a wide range of applications, including high power applications. Its low on-resistance also makes it beneficial in applications where low on-resistance is necessary, such as battery management systems or other applications in which power losses must be minimized.
Working Principle
The STP200NF04 is a Field-Effect Transistor (FET) that operates in enhancement mode. A FET is a voltage-controlled device that operates by controlling the flow of current between the source and drain terminals by using an external electric field. In the STP200NF04, when a voltage is applied to the Gate terminal, it creates an electric field that “enhances” or pulls electrons from the body of the MOSFET, allowing a current to flow from the source to the drain terminals. This process can be reversed by removing the voltage from the Gate, which deactivates the electric field and stops the current flow, thus turning the MOSFET off. In addition to turning the device on and off, the Gate voltage also controls the amount of current that flows through the MOSFET. As the Gate voltage increases, the current flowing through the MOSFET increases. This makes the STP200NF04 ideal for applications that require precise current control.
Conclusion
The STP200NF04 is a versatile and robust N-channel and enhancement mode MOSFET suitable for a wide array of applications where fast switching, high power, and precise current control are necessary. Its low on-resistance and wide temperature range make it an ideal component for battery management systems, and its ability to operate in enhancement mode makes it ideal for load switching, motor control, and DC/DC converter applications.
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