| Allicdata Part #: | 497-3184-5-ND |
| Manufacturer Part#: |
STP20NM60 |
| Price: | $ 4.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 20A TO-220 |
| More Detail: | N-Channel 600V 20A (Tc) 192W (Tc) Through Hole TO-... |
| DataSheet: |  STP20NM60 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 4.25880 |
| 10 +: | $ 4.13104 |
| 100 +: | $ 4.04586 |
| 1000 +: | $ 3.96068 |
| 10000 +: | $ 3.83292 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 192W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
| Series: | MDmesh™ |
| Rds On (Max) @ Id, Vgs: | 290 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STP20NM60 is a N-channel Power MOSFET (metal oxide semiconductor field effect transistor) produced by STMicroelectronics. It has a low on-resistance feature, making it suitable for use in high demanding switching applications.
The STP20NM60 utilizes an advanced process technology for high levels of performance and reliability. It has a 20V drain-source breakdown voltage and Rds (on) at 25°C of 0.60 ohms, making it suitable for various power conversion applications.
This device offers low on-resistance due to its wide cell structure and advanced high temperature annealing process. It also has a very low gate-source capacitance, providing a faster turn-off time. With higher switching speeds, it is suitable for applications where high efficiency is a must.
The STP20NM60 has a linear transconductance and an integrated gate-charge circuit which helps to reduce switching losses and further improves the overall efficiency. The device comes in an industry-leading PowerFLAT package which is ideal for high power conversion applications.
The STP20NM60 is used in a variety of applications such as AC-DC converters, DC-DC converters, high voltage switches, motor control, and other high performance switching applications. It is also suitable for use in low voltage, high current applications.
The working principle of the STP20NM60 is based on the principles of a MOSFET. A MOSFET consists of three terminals; the source, gate and drain. The gate voltage controls the drain-source channel allowing current to flow. When the gate voltage is lower than the source voltage, the MOSFET is said to be in the off state and no current will flow through the device. When the gate voltage is higher than the source voltage, the MOSFET is said to be in the on state and current will flow through the device.
The STP20NM60 has been designed to provide a high degree of power handling and switching ability. The device is capable of handling up to 20A of continuous current and 40A of pulsed current, making it suitable for applications such as motor control, automotive, and high frequency power conversion applications. The low on-resistance and wide range of operating voltage makes the STP20NM60 a great choice for these types of applications.
Overall, the STP20NM60 is a versatile device that has a wide range of applications. It is suitable for use in high voltage and high efficiency power conversion applications such as AC-DC and DC-DC converters, as well as motor control and other high performance switching applications. It is also ideal for low voltage and high current applications due to its low on-resistance, integrated gate-charge circuit and industry leading PowerFLAT package.
The specific data is subject to PDF, and the above content is for reference
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