Allicdata Part #: | 497-11872-5-ND |
Manufacturer Part#: |
STP20NM65N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 15A TO-220 |
More Detail: | N-Channel 650V 15A (Tc) 125W (Tc) Through Hole TO-... |
DataSheet: | STP20NM65N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1280pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP20NM65N is an enhancement mode transistor that belongs to N-channel metal–oxide–semiconductor field-effect transistors (MOSFETs). It is a widely used device for many applications due to its low on-state resistance, low input capacitance, and good switching characteristics. The STP20NM65N is manufactured by STMicroelectronics and is often used in various switch mode power supply (SMPS), power factor correction (PFC), and phase-cut dimming applications.
The STP20NM65N has two main types of characteristics, namely its inhibit threshold voltage and the gate-source voltage. The inhibit threshold voltage is the minimum gate-source voltage needed to turn the device on, while the gate-source voltage is the voltage between the gate and the source terminal. These two characteristics are important in controlling the operation of the MOSFET and act as key parameters in its application. The STP20NM65N has an inhibit threshold voltage of 2V and a gate-source voltage of 7V.
The STP20NM65N utilizes a MOSFET structure that has the capability to operate in the enhancement mode. This means that the device will remain off even when the gate-source voltage is applied. To turn the device on, the gate-source voltage must be increased beyond the inhibit threshold voltage. This will cause an inversion layer to form at the source-drain junction and allow current to pass through. The device will then remain on until the gate-source voltage falls below the inhibit threshold voltage.
The STP20NM65N is suitable for SMPS and PFC applications due to its low on-state resistance. This resistance is determined by the size of the device, with smaller devices having lower on-state resistance. Smaller devices also have lower input capacitance, resulting in faster switching times. In addition, the device is capable of handling large currents without requiring large heat sinks or cooling components.
The STP20NM65N is also commonly used in phase-cut dimming applications. This type of dimming uses pulse width modulation (PWM) to control the brightness of the LED lights. The device can be used to control the LED on/off time by modulating the gate-source voltage. When the voltage is applied, the LED will turn on and remain on for the duration of the pulse. When the pulse width is reduced, the LED will turn off and remain off for the remainder of the cycle.
The STP20NM65N is a reliable and efficient MOSFET device that is suitable for many different applications. Its low on-state resistance and input capacitance make it perfect for switch mode power supply, power factor correction, and phase-cut dimming applications. Its small form factor also makes it an ideal device for applications with space constraints. The STP20NM65N is a robust transistor that is capable of handling large amounts of power while providing excellent switching times.
The specific data is subject to PDF, and the above content is for reference
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