STP210N75F6

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STP210N75F6 Application Field and Working Principle

The STP210N75F6 is a high drain N-channel enhanced mode vertical MAXFET power MOSFET (metal oxide semiconductor field-effect transistor). It is the latest generation of high-power MOSFETs from STMicroelectronics for use with advanced digital circuitry operating at high frequencies.

The STP210N75F6 is intended as an enhancement-mode vertical-channel MOSFET with either single or dual Gate and drain Voltages. The device can be used as a stand-alone power transistor or as part of a discrete power device, such as an H-Bridge or Performance Logic power amplifier.

Applications of the STP210N75F6

The STP210N75F6 can be used in a wide range of applications, such as DC-DC converters, AC-DC converters, and DC-AC converters. It can also be used in applications where high-power handling, low gate charge and fast switching times are important.

The STP210N75F6 can also be used in audio applications, such as in high-power audio amplifiers and certain types of power transistors. It can also be used in various automotive applications, such as in power steering systems and other vehicle electronics.

Working Principle of the STP210N75F6

The working principle of the STP210N75F6 is based on the principles of metal oxide semiconductor technology. This technology is based on the fact that electric fields can both allow and block the passage of electrical currents through a channel of electrons. When a voltage is applied across a transistor channel, the electric field created will be either a field-effect transistor (FET) or a metal oxide-semiconductor field-effect transistor (MOSFET). If a positive voltage is applied, the electric field will force the conducting particles (electrons) to move along the channel, while if a negative voltage is applied, the electric field will prevent the electrons from moving along the channel, thus blocking the passage of electric current.

In the STP210N75F6, this principle is used to create a MOSFET with single or dual Gates, drain and source Voltages, and high switching speeds. This MOSFET is also designed to have a low static drain-source on-resistance (RDS(on)), and it is designed to handle high currents and power levels with low losses.

The STP210N75F6 is designed with a vertical, symmetrical D-MOS structure and it is usually available in a package style of TO-220AB or SOP-8. The device is capable of handling up to 100A and with a drain to source breakdown voltage of up to 175V.

Conclusion

The STP210N75F6 is an N-channel metal oxide semiconductor field-effect transistor that is used in a wide range of applications, such as DC-DC converters, AC-DC converters and DC-AC converters. It is also used in audio applications and in certain types of power transistors, as well as in automotive applications, such as in power steering systems and other vehicle electronics. The STP210N75F6 is designed with a vertical, symmetrical D-MOS structure and it is usually available in either a TO-220AB or SOP-8 package.

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