Allicdata Part #: | 497-12864-5-ND |
Manufacturer Part#: |
STP21N90K5 |
Price: | $ 5.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 900V 18.5A TO-220 |
More Detail: | N-Channel 900V 18.5A (Tc) 250W (Tc) Through Hole T... |
DataSheet: | STP21N90K5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 4.92660 |
50 +: | $ 3.96119 |
100 +: | $ 3.60908 |
500 +: | $ 2.92249 |
1000 +: | $ 2.46475 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1645pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | SuperMESH5™ |
Rds On (Max) @ Id, Vgs: | 299 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18.5A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STP21N90K5 is a 700V vertical power MOSFET transistor from STMicroelectronics. The transistor is built using the advanced high-voltage DMOS technology and has a very low drive current for switch mode applications. It has very low on-state resistance and high surge capability. The device also features a built-in temperature protection and is optimized for synchronous rectification, reducing the risk of overshoot at high speed switching. The STP21N90K5 is available in a TO-220 inhibit package.
The application field of STP21N90K5 is mainly intended for use in power conversion applications such as in switch mode power supplies and DC/DC converters. It is also suitable for motor control, lighting, and home appliances. The devices are also specifically designed to be used in SMPS, UPS, and other applications with high voltage. As a MOSFET transistor, STP21N90K5 can also be applied in low-voltage high-power switching devices.
The working principle of STP21N90K5 is based on the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) transistor technology. In the MOSFET transistor, the flow of current from drain to source is controlled by the voltage applied on the gate. When the gate voltage is greater than the source voltage, the transistor becomes \'on\' and the drain and source are connected. When the gate voltage is smaller than the source voltage, the transistor is \'off\' and does not conduct any current from drain to source. The current flow can be regulated by controlling the gate voltage. Furthermore, the voltage applied on the gate has very low power dissipation even at high source current.
The features of STP21N90K5 That contribute to its low power dissipation include low on-state resistance (RDS(on)), high surge capability, and high maximum junction temperature. The low RDS(on) reduces the conduction losses of the transistor, meaning less heat is produced. The High Surge Capability allows the transistor to conduct large power surges without damaging its internal structure. The high maximum Junction temperature allows the transistor to operate in a wide range of temperature conditions while still maintaining its performance. The temperature protection integrated into the device also ensures that heat is dissipated properly even when operating in high temperatures.
Overall, STP21N90K5 is an ideal transistor for applications which involve high source currents, such as in switch mode power supplies and DC/DC converters. It features low on-state resistance and high surge capability, low power dissipation, and high maximum junction temperature. The built-in temperature protection also ensures that the device operates within its specified electrical parameters, even when running in high temperatures.
The specific data is subject to PDF, and the above content is for reference
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