STP21NM60ND

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STP21NM60ND Application Field and Working Principle

The STP21NM60ND is a N-channel enhancement mode power MOSFET designed to deliver high performance, efficiencies and high current load capabilities. The device has an internal gate protection for increased efficiency and long-term reliability in various applications. The STP21NM60ND also has a very low gate threshold voltage making it suitable for low voltage switching applications.

Features and Benefits of the STP21NM60ND

• Low threshold voltage.
• Wide drain-source breakdown voltage.
• Excellent switching capabilities.
• High linearity with low input capacitance.
• Low on-state resistance.
• High power handling capability.

Applications

The STP21NM60ND is designed for a variety of end-use applications such as smart phones, tablets, laptops, power amplifiers and other power supplies. The device is suitable for high-current load applications due to its high power handling capabilities. Moreover, it is capable of switching at very low voltages making it the ideal choice for automotive and other low-voltage applications.

Working Principle

The STP21NM60ND is a N-channel enhancement mode power MOSFET. It is composed of four parts: the source, drain, gate, and body terminals. The source and drain terminals are connected to the semiconductor body, while the gate terminal is insulated from the body by a thin layer of low grade (low voltage) insulation. Under normal conditions, no current will flow through the device as the gate is electrically disconnected from the body. When a voltage is applied to the gate, a change in electric field occurs, which causes electrons from the body to be drawn through the gate, thus “enhancing” the conduction path from the source to the drain. This is known as “enhancement mode” operation. The gate voltage also determines the degree to which electrons are drawn to the gate, thus allowing for control of the device’s on-resistance.

In conclusion, the STP21NM60ND is a versatile and high quality power MOSFET, with high power handling and switching capabilities. It is suitable for a variety of applications such as smart phones, tablets, laptops, and other power supplies. The device is capable of switching at very low voltages, and has an excellent on-state linearity with low input capacitance.

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